We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 15 Feb 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)