Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
Original language | English |
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Pages (from-to) | 1042-1044 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 7 |
Publication status | Published - 15 Feb 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)