Negative differential resistance due to single-electron switching

C. P. Heij*, D. C. Dixon, P. Hadley, J. E. Mooij

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

Original languageEnglish
Pages (from-to)1042-1044
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number7
Publication statusPublished - 15 Feb 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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