Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
Originalsprache | englisch |
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Seiten (von - bis) | 1042-1044 |
Seitenumfang | 3 |
Fachzeitschrift | Applied Physics Letters |
Jahrgang | 74 |
Ausgabenummer | 7 |
Publikationsstatus | Veröffentlicht - 15 Feb. 1999 |
Extern publiziert | Ja |
ASJC Scopus subject areas
- Physik und Astronomie (sonstige)