Initiated PECVD of organosilicon coatings: A new strategy to enhance monomer structure retention

Anna Maria Coclite, Karen K. Gleason*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O-O) in the initiator permits the formation of radical species at very low plasma power density (0.07W·cm -2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers. Herein we show a new deposition method, initiated-PECVD (iPECVD), as an alternative to iCVD and PECVD, for the monomers that are not easily polymerizable by iCVD (e.g., the organosilicon monomers) but where a certain structure retention is needed. The addition of a radical initiator allows to ignite a plasma discharge at plasma density as low as 0.07W·cm -2. In this condition the carbon content of the monomer molecule is completely retained and at reasonably high deposition rate.

Original languageEnglish
Pages (from-to)425-434
Number of pages10
JournalPlasma Processes and Polymers
Volume9
Issue number4
DOIs
Publication statusPublished - 1 Apr 2012
Externally publishedYes

Keywords

  • deposition kinetics
  • FT-IR
  • initiated PECVD
  • organosilicon precursors
  • structure retention

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Polymers and Plastics

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