Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM)

Bernhard Schaffer, Werner Grogger, Ferdinand Hofer

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Original languageEnglish
Title of host publication13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge
Publisher.
PagesMSM13-MSM13
Publication statusPublished - 2003

Cite this

Schaffer, B., Grogger, W., & Hofer, F. (2003). Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM). In 13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge (pp. MSM13-MSM13). ..

Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM). / Schaffer, Bernhard; Grogger, Werner; Hofer, Ferdinand.

13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge. ., 2003. p. MSM13-MSM13.

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Schaffer, B, Grogger, W & Hofer, F 2003, Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM). in 13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge. ., pp. MSM13-MSM13.
Schaffer B, Grogger W, Hofer F. Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM). In 13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge. . 2003. p. MSM13-MSM13
Schaffer, Bernhard ; Grogger, Werner ; Hofer, Ferdinand. / Imaging of ultrathin silicon oxide layers in semiconducting devices by means of energy filtering transmission electron microscopy (EFTEM). 13th Int. Conf. on Microscopy of Semiconducting Materials (MSM13), Cambridge. ., 2003. pp. MSM13-MSM13
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