Thermally induced stresses in thin aluminium layers grown on silicon

Ernst Eiper, Roland Resel, C. Eisenmenger-Sittner, M. Hafok, J. Keckes

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Originalspracheenglisch
Seiten (von - bis)74-76
FachzeitschriftPowder diffraction
Jahrgang19
Ausgabenummer1
DOIs
PublikationsstatusVeröffentlicht - 2004

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Thermally induced stresses in thin aluminium layers grown on silicon. / Eiper, Ernst; Resel, Roland; Eisenmenger-Sittner, C.; Hafok, M.; Keckes, J.

in: Powder diffraction, Jahrgang 19, Nr. 1, 2004, S. 74-76.

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Eiper, E, Resel, R, Eisenmenger-Sittner, C, Hafok, M & Keckes, J 2004, 'Thermally induced stresses in thin aluminium layers grown on silicon' Powder diffraction, Jg. 19, Nr. 1, S. 74-76. https://doi.org/10.1154/1.1649326
Eiper, Ernst ; Resel, Roland ; Eisenmenger-Sittner, C. ; Hafok, M. ; Keckes, J. / Thermally induced stresses in thin aluminium layers grown on silicon. in: Powder diffraction. 2004 ; Jahrgang 19, Nr. 1. S. 74-76.
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