Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

A. Montaigne Ramil; Th. B. Singh; Thomas Haber; N. Marjanovic; S. Günes; A. Andreev; G. J. Matt; Roland Resel; H. Sitter; N. S. Sariciftci

Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

A. Montaigne Ramil, Th. B. Singh, Thomas Haber, N. Marjanovic, S. Günes, A. Andreev, G. J. Matt, Roland Resel, H. Sitter, N. S. Sariciftci

Institut für Festkörperphysik (5130)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Originalsprache	englisch
Seiten (von - bis)	123-127
Fachzeitschrift	Journal of Crystal Growth
Jahrgang	288
Ausgabenummer	1
Publikationsstatus	Veröffentlicht - 2006

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Dieses zitieren

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title = "Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors",

author = "{Montaigne Ramil}, A. and Singh, {Th. B.} and Thomas Haber and N. Marjanovic and S. G{\"u}nes and A. Andreev and Matt, {G. J.} and Roland Resel and H. Sitter and Sariciftci, {N. S.}",

year = "2006",

language = "English",

volume = "288",

pages = "123--127",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

AU - Montaigne Ramil, A.

AU - Singh, Th. B.

AU - Haber, Thomas

AU - Marjanovic, N.

AU - Günes, S.

AU - Andreev, A.

AU - Matt, G. J.

AU - Resel, Roland

AU - Sitter, H.

AU - Sariciftci, N. S.

PY - 2006

Y1 - 2006

M3 - Article

SN - 0022-0248

VL - 288

SP - 123

EP - 127

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -