Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

A. Montaigne Ramil, Th. B. Singh, Thomas Haber, N. Marjanovic, S. Günes, A. Andreev, G. J. Matt, Roland Resel, H. Sitter, N. S. Sariciftci

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)123-127
JournalJournal of Crystal Growth
Volume288
Issue number1
Publication statusPublished - 2006

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

Montaigne Ramil, A., Singh, T. B., Haber, T., Marjanovic, N., Günes, S., Andreev, A., ... Sariciftci, N. S. (2006). Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors. Journal of Crystal Growth, 288(1), 123-127.