Defect localization in high-power vertical cavity surface emitting laser arrays by means of reverse biased emission microscopy

Robert Fabbro*, Thomas Haber, Gernot Fasching, Raffaele Coppeta, Michael Pusterhofer, Werner Grogger

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Applying a reverse bias near the breakdown voltage results in photon emission at the pn-junction in vertical cavity surface emitting lasers (VCSELs). This radiation can be collected with an emission microscope. Here, this technique is employed to investigate a high-power two dimensional (2D) VCSEL array with a large number of emitters at a non-degraded state and after high electrical stress. It has been found that non-degraded arrays show varying photon intensities across all emitters at breakdown condition while degraded arrays exhibit more intense electroluminescence at areas with faulty emitters containing defects in the active area as confirmed by plan view scanning transmission electron microscopy analysis.

Original languageEnglish
Article number095406
JournalMeasurement Science and Technology
Volume32
Issue number9
DOIs
Publication statusPublished - Sep 2021

Keywords

  • defect localization
  • plan view transmission electron microscopy
  • reverse biased emission
  • VCSEL

ASJC Scopus subject areas

  • Instrumentation
  • Engineering (miscellaneous)
  • Applied Mathematics

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