Abstract
The ability to transfer electrons from valence to conduction band states in a semiconductor is the basis of modern electronics. Here, attosecond spectroscopy is used to resolve this process in real-time. The excitation of electrons across the band-gap of silicon by few-cycle laser pulses is found to induce lasting modifications of the XUV absorbance spectrum in steps synchronized with the laser electric field oscillations, indicative of light-field induced electron tunneling [1]. In contrast, in SiO 2, a dielectric with 9 eV band-gap, similar excitation pulses are found to cause a transient field-induced polarizability without lasting population transfer [2].
Originalsprache | englisch |
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Seiten (von - bis) | FTh4C. 1 |
Fachzeitschrift | Conference on Lasers and Electro-Optics |
DOIs | |
Publikationsstatus | Veröffentlicht - 2015 |
Extern publiziert | Ja |
Veranstaltung | 2015 Conference on Lasers and Electro-Optics: CLEO - San Jose, USA / Vereinigte Staaten Dauer: 10 Mai 2015 → 15 Mai 2015 |
Fields of Expertise
- Advanced Materials Science