Attosecond Spectroscopy of Band-gap Dynamics

M. Schultze, K. Ramasesha, E. Bothschafter, A. Sommer, C. D. Pemmaraju, S. A. Sato, D. Whitmore, A. Gandman, J. S. Prell, L. J. Borja, D. Prendergast, K. Yabana, D. M. Neumark, F. Krausz, S. R. Leone

Publikation: Beitrag in einer FachzeitschriftKonferenzartikel

Abstract

The ability to transfer electrons from valence to conduction band states in a semiconductor is the basis of modern electronics. Here, attosecond spectroscopy is used to resolve this process in real-time. The excitation of electrons across the band-gap of silicon by few-cycle laser pulses is found to induce lasting modifications of the XUV absorbance spectrum in steps synchronized with the laser electric field oscillations, indicative of light-field induced electron tunneling [1]. In contrast, in SiO 2, a dielectric with 9 eV band-gap, similar excitation pulses are found to cause a transient field-induced polarizability without lasting population transfer [2].
Originalspracheenglisch
Seiten (von - bis)FTh4C. 1
FachzeitschriftConference on Lasers and Electro-Optics
DOIs
PublikationsstatusVeröffentlicht - 2015
Extern publiziertJa
Veranstaltung2015 Conference on Lasers and Electro-Optics: CLEO - San Jose, USA / Vereinigte Staaten
Dauer: 10 Mai 201515 Mai 2015

Fields of Expertise

  • Advanced Materials Science

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