A Distributed-Parameter Approach for the Surface Temperature Estimation of an LED Heated Silicon Wafer

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Abstract

A variety of processes in the semiconductor industry require heating of the silicon wafer to the desired temperature. This process is widely referred to as rapid thermal processing. However, the contactless measurement of the surface temperature of the wafer is still a major challenge, especially in the case of rotating wafers. Measurements using infrared cameras are not suitable due to the fact that silicon is transparent in this wavelength range. Special sensors based on the principle of pyrometry are available, but such sensors can only measure the surface temperature at one single point. This paper presents an observer approach that estimates the wafer's surface temperature by using the temperature measurement of only one pyrometer. The approach is based on a mathematical model capturing the dynamical behavior of the wafer's temperature. It relies mainly on the quasi-linear heat equation. Real world experiments demonstrate the achieved accuracy of the proposed approach.
Originalspracheenglisch
FachzeitschriftIEEE transactions on semiconductor manufacturing
PublikationsstatusAngenommen/In Druck - 2019

Fingerprint

Silicon wafers
surface temperature
Light emitting diodes
light emitting diodes
wafers
silicon
temperature measurement
Temperature
Pyrometry
Rapid thermal processing
Pyrometers
pyrometers
sensors
Sensors
Silicon
Temperature measurement
mathematical models
Cameras
industries
cameras

Dies zitieren

@article{69ff2de6e8cd49518971ae518b35c3d3,
title = "A Distributed-Parameter Approach for the Surface Temperature Estimation of an LED Heated Silicon Wafer",
abstract = "A variety of processes in the semiconductor industry require heating of the silicon wafer to the desired temperature. This process is widely referred to as rapid thermal processing. However, the contactless measurement of the surface temperature of the wafer is still a major challenge, especially in the case of rotating wafers. Measurements using infrared cameras are not suitable due to the fact that silicon is transparent in this wavelength range. Special sensors based on the principle of pyrometry are available, but such sensors can only measure the surface temperature at one single point. This paper presents an observer approach that estimates the wafer's surface temperature by using the temperature measurement of only one pyrometer. The approach is based on a mathematical model capturing the dynamical behavior of the wafer's temperature. It relies mainly on the quasi-linear heat equation. Real world experiments demonstrate the achieved accuracy of the proposed approach.",
author = "Martin Kleindienst and Markus Reichhartinger and Stefan Koch and Martin Horn",
year = "2019",
language = "English",
journal = "IEEE transactions on semiconductor manufacturing",
issn = "0894-6507",
publisher = "Institute of Electrical and Electronics Engineers",

}

TY - JOUR

T1 - A Distributed-Parameter Approach for the Surface Temperature Estimation of an LED Heated Silicon Wafer

AU - Kleindienst, Martin

AU - Reichhartinger, Markus

AU - Koch, Stefan

AU - Horn, Martin

PY - 2019

Y1 - 2019

N2 - A variety of processes in the semiconductor industry require heating of the silicon wafer to the desired temperature. This process is widely referred to as rapid thermal processing. However, the contactless measurement of the surface temperature of the wafer is still a major challenge, especially in the case of rotating wafers. Measurements using infrared cameras are not suitable due to the fact that silicon is transparent in this wavelength range. Special sensors based on the principle of pyrometry are available, but such sensors can only measure the surface temperature at one single point. This paper presents an observer approach that estimates the wafer's surface temperature by using the temperature measurement of only one pyrometer. The approach is based on a mathematical model capturing the dynamical behavior of the wafer's temperature. It relies mainly on the quasi-linear heat equation. Real world experiments demonstrate the achieved accuracy of the proposed approach.

AB - A variety of processes in the semiconductor industry require heating of the silicon wafer to the desired temperature. This process is widely referred to as rapid thermal processing. However, the contactless measurement of the surface temperature of the wafer is still a major challenge, especially in the case of rotating wafers. Measurements using infrared cameras are not suitable due to the fact that silicon is transparent in this wavelength range. Special sensors based on the principle of pyrometry are available, but such sensors can only measure the surface temperature at one single point. This paper presents an observer approach that estimates the wafer's surface temperature by using the temperature measurement of only one pyrometer. The approach is based on a mathematical model capturing the dynamical behavior of the wafer's temperature. It relies mainly on the quasi-linear heat equation. Real world experiments demonstrate the achieved accuracy of the proposed approach.

M3 - Article

JO - IEEE transactions on semiconductor manufacturing

JF - IEEE transactions on semiconductor manufacturing

SN - 0894-6507

ER -