Volcano effect in open through silicon via (TSV) technology

J. Kraft, E. Stückler, C. Cassidy, W. Niko, F. Schrank, E. Wachmann, Christian Gspan, Ferdinand Hofer

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium
Place of PublicationPiscataway, NY
PublisherInstitute of Electrical and Electronics Engineers
PagesPI2.1-PI2.5
ISBN (Print)978-1-4577-1678-2
DOIs
Publication statusPublished - 2012
EventIEEE International Reliability Physics Symposium - Anaheim, United States
Duration: 15 Apr 201219 Apr 2012

Conference

ConferenceIEEE International Reliability Physics Symposium
CountryUnited States
CityAnaheim
Period15/04/1219/04/12

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

Kraft, J., Stückler, E., Cassidy, C., Niko, W., Schrank, F., Wachmann, E., ... Hofer, F. (2012). Volcano effect in open through silicon via (TSV) technology. In 2012 IEEE International Reliability Physics Symposium (pp. PI2.1-PI2.5). Piscataway, NY: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IRPS.2012.6241924