Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Darshan Shetty; Christoph Steffan; Gerald Holweg; Wolfgang Bosch; Jasmin Grosinger

doi:10.1109/TCSI.2022.3225574

Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Darshan Shetty, Christoph Steffan, Gerald Holweg, Wolfgang Bosch, Jasmin Grosinger^*

^*Corresponding author for this work

Institute of Microwave and Photonic Engineering (4510)

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (VREF and IREF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/°C and 822ppm/°C over a temperature range from - 40°C to 120°C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

Original language	English
Pages (from-to)	1030 - 1042
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	70
Issue number	3
DOIs	https://doi.org/10.1109/TCSI.2022.3225574
Publication status	Published - 2023

Keywords

current reference
curvature compensation
high-precision
Manganese
Resistors
sub-1V
sub-threshold CMOS design
temperature compensation
Temperature dependence
Temperature measurement
Threshold voltage
Transistors
ultra-low-power
Video recording
Voltage reference
voltage-current reference

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Fields of Expertise

Information, Communication & Computing

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/TCSI.2022.3225574Licence: CC BY 4.0

Cite this

@article{f73e3108e49b4331abf956b064757719,

title = "Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference",

abstract = "This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (VREF and IREF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/°C and 822ppm/°C over a temperature range from - 40°C to 120°C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.",

keywords = "current reference, curvature compensation, high-precision, Manganese, Resistors, sub-1V, sub-threshold CMOS design, temperature compensation, Temperature dependence, Temperature measurement, Threshold voltage, Transistors, ultra-low-power, Video recording, Voltage reference, voltage-current reference",

author = "Darshan Shetty and Christoph Steffan and Gerald Holweg and Wolfgang Bosch and Jasmin Grosinger",

note = "Publisher Copyright: Author",

year = "2023",

doi = "10.1109/TCSI.2022.3225574",

language = "English",

volume = "70",

pages = " 1030 -- 1042",

journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",

issn = "1549-8328",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

AU - Shetty, Darshan

AU - Steffan, Christoph

AU - Holweg, Gerald

AU - Bosch, Wolfgang

AU - Grosinger, Jasmin

N1 - Publisher Copyright: Author

PY - 2023

Y1 - 2023

N2 - This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (VREF and IREF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/°C and 822ppm/°C over a temperature range from - 40°C to 120°C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

AB - This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (VREF and IREF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/°C and 822ppm/°C over a temperature range from - 40°C to 120°C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

KW - current reference

KW - curvature compensation

KW - high-precision

KW - Manganese

KW - Resistors

KW - sub-1V

KW - sub-threshold CMOS design

KW - temperature compensation

KW - Temperature dependence

KW - Temperature measurement

KW - Threshold voltage

KW - Transistors

KW - ultra-low-power

KW - Video recording

KW - Voltage reference

KW - voltage-current reference

UR - http://www.scopus.com/inward/record.url?scp=85144782862&partnerID=8YFLogxK

U2 - 10.1109/TCSI.2022.3225574

DO - 10.1109/TCSI.2022.3225574

M3 - Article

AN - SCOPUS:85144782862

SN - 1549-8328

VL - 70

SP - 1030

EP - 1042

JO - IEEE Transactions on Circuits and Systems I: Regular Papers

JF - IEEE Transactions on Circuits and Systems I: Regular Papers

IS - 3

ER -

Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Abstract

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

Other files and links

Fingerprint

Wireless Power Transmission for Sustainable Electronics (WIPE)

Radio Frequency Identification (RFID) Technologies

Cite this

Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Abstract

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

Other files and links

Fingerprint

Projects

Wireless Power Transmission for Sustainable Electronics (WIPE)

Radio Frequency Identification (RFID) Technologies

Cite this