Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Darshan Shetty*, Christoph Steffan, Wolfgang Bösch, Jasmin Grosinger

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review

Abstract

This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems, ISCAS 2022
PublisherInstitute of Electrical and Electronics Engineers
Pages843-847
Number of pages5
ISBN (Electronic)9781665484855
DOIs
Publication statusPublished - 2022
Event2022 IEEE International Symposium on Circuits and Systems: ISCAS 2022 - Austin, United States
Duration: 27 May 20221 Jun 2022

Conference

Conference2022 IEEE International Symposium on Circuits and Systems
Abbreviated titleISCAS 2022
Country/TerritoryUnited States
CityAustin
Period27/05/221/06/22

Keywords

  • current reference
  • high-precision
  • second-order compensation
  • sub-threshold CMOS design
  • temperature compensation
  • ultra-low power
  • voltage reference

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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