TVS devices transient behavior modeling framework and application to Seed

Li Shen, Shubhankar Marathe, Javad Meiguni, Guangxiao Luo, Jianchi Zhou, David Pommerenke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The transient behavior for four different types of TVS (non-snapback, snapback, spark gap, varistor) is modeled using the same modeling framework. By a 10 ns VF-TLP, the quasi-static I-V curve and the transient turn-on are captured and modeled in ADS. The models are applied in a SEED simulation to investigate the strengths and weaknesses of the modeling frame.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019
PublisherESD Association
ISBN (Electronic)9781585373116
Publication statusPublished - 1 Sep 2019
Externally publishedYes
Event41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019 - Riverside, United States
Duration: 15 Sep 201920 Sep 2019

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2019-September
ISSN (Print)0739-5159

Conference

Conference41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019
CountryUnited States
CityRiverside
Period15/09/1920/09/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Shen, L., Marathe, S., Meiguni, J., Luo, G., Zhou, J., & Pommerenke, D. (2019). TVS devices transient behavior modeling framework and application to Seed. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2019-September). ESD Association.