| Original language | English |
|---|---|
| Pages (from-to) | 36-40 |
| Number of pages | 5 |
| Journal | Solid state phenomena |
| Publication status | Published - 2016 |
Cite this
Okorn, G., Fischer, R., Steller, B. G., Engesser, P., & Okorn-Schmidt, H. (2016). Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces, Solid state phenomena, 36-40.
Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces, / Okorn, Gilbert; Fischer, Roland; Steller, Beate Gabriele; Engesser, Philipp; Okorn-Schmidt, Harald.
In: Solid state phenomena, 2016, p. 36-40.Research output: Contribution to journal › Article › Research › peer-review
Okorn, G, Fischer, R, Steller, BG, Engesser, P & Okorn-Schmidt, H 2016, 'Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces,' Solid state phenomena, pp. 36-40.
Okorn G, Fischer R, Steller BG, Engesser P, Okorn-Schmidt H. Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces, Solid state phenomena. 2016;36-40.
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title = "Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces,",
author = "Gilbert Okorn and Roland Fischer and Steller, {Beate Gabriele} and Philipp Engesser and Harald Okorn-Schmidt",
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language = "English",
pages = "36--40",
journal = "Solid state phenomena",
issn = "1012-0394",
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TY - JOUR
T1 - Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces,
AU - Okorn, Gilbert
AU - Fischer, Roland
AU - Steller, Beate Gabriele
AU - Engesser, Philipp
AU - Okorn-Schmidt, Harald
PY - 2016
Y1 - 2016
M3 - Article
SP - 36
EP - 40
JO - Solid state phenomena
JF - Solid state phenomena
SN - 1012-0394
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