Transition Voltage: Coverage Dependance and Impact of Anchoring Groups

Thomas Christoph Taucher, Veronika Obersteiner, Egbert Zojer

Research output: Contribution to conferencePosterResearchpeer-review

Abstract

When characterizing molecular and monolayer junctions one of the key-parameters used is the so-called transition voltage. Unfortunately, its relation to the intrinsic electronic properties of the junction is still poorly understood, although Baldea, Frisbie and co-workers have recently obtained an excellent correlation between the energetic positions of the electronic transport channels extracted from a simple one-state model and the positions of the peaks in the density of states obtained via photoelectron spectroscopy measurements.
This raises the question, to what extent a model building on a single, discrete energy level can be sufficient to represent the complex electronic structure of the junction. We investigated the applicability of the aforementioned model especially in view of the vastly different coupling strength between substrates and molecules upon changing the docking chemistry.
For this, we simulated the electronic structure of a wide range of molecular junctions using density functional theory based methods and calculated the current-voltage characteristics by employing the Landauer-Büttiger formalism. Finally, from these characteristics we fitted the energetic position of the above-mentioned discrete “transport” level. Its properties are then compared to the actual electronic structure of the junction.
Original languageEnglish
Publication statusPublished - 11 Sep 2018
Event68th Annual Meeting of the Austrian Physical Society - Technische Universität Graz, Graz, Austria
Duration: 11 Sep 201814 Sep 2018
Conference number: 68
https://www.tugraz.at/events/oepg2018/home/

Conference

Conference68th Annual Meeting of the Austrian Physical Society
Abbreviated titleÖPG
CountryAustria
CityGraz
Period11/09/1814/09/18
Internet address

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electric potential
electronic structure
electronics
energy levels
photoelectron spectroscopy
chemistry
density functional theory
formalism
molecules

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Theoretical

Cite this

Taucher, T. C., Obersteiner, V., & Zojer, E. (2018). Transition Voltage: Coverage Dependance and Impact of Anchoring Groups. Poster session presented at 68th Annual Meeting of the Austrian Physical Society, Graz, Austria.

Transition Voltage: Coverage Dependance and Impact of Anchoring Groups. / Taucher, Thomas Christoph; Obersteiner, Veronika; Zojer, Egbert.

2018. Poster session presented at 68th Annual Meeting of the Austrian Physical Society, Graz, Austria.

Research output: Contribution to conferencePosterResearchpeer-review

Taucher, TC, Obersteiner, V & Zojer, E 2018, 'Transition Voltage: Coverage Dependance and Impact of Anchoring Groups' 68th Annual Meeting of the Austrian Physical Society, Graz, Austria, 11/09/18 - 14/09/18, .
Taucher TC, Obersteiner V, Zojer E. Transition Voltage: Coverage Dependance and Impact of Anchoring Groups. 2018. Poster session presented at 68th Annual Meeting of the Austrian Physical Society, Graz, Austria.
Taucher, Thomas Christoph ; Obersteiner, Veronika ; Zojer, Egbert. / Transition Voltage: Coverage Dependance and Impact of Anchoring Groups. Poster session presented at 68th Annual Meeting of the Austrian Physical Society, Graz, Austria.
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N2 - When characterizing molecular and monolayer junctions one of the key-parameters used is the so-called transition voltage. Unfortunately, its relation to the intrinsic electronic properties of the junction is still poorly understood, although Baldea, Frisbie and co-workers have recently obtained an excellent correlation between the energetic positions of the electronic transport channels extracted from a simple one-state model and the positions of the peaks in the density of states obtained via photoelectron spectroscopy measurements. This raises the question, to what extent a model building on a single, discrete energy level can be sufficient to represent the complex electronic structure of the junction. We investigated the applicability of the aforementioned model especially in view of the vastly different coupling strength between substrates and molecules upon changing the docking chemistry. For this, we simulated the electronic structure of a wide range of molecular junctions using density functional theory based methods and calculated the current-voltage characteristics by employing the Landauer-Büttiger formalism. Finally, from these characteristics we fitted the energetic position of the above-mentioned discrete “transport” level. Its properties are then compared to the actual electronic structure of the junction.

AB - When characterizing molecular and monolayer junctions one of the key-parameters used is the so-called transition voltage. Unfortunately, its relation to the intrinsic electronic properties of the junction is still poorly understood, although Baldea, Frisbie and co-workers have recently obtained an excellent correlation between the energetic positions of the electronic transport channels extracted from a simple one-state model and the positions of the peaks in the density of states obtained via photoelectron spectroscopy measurements. This raises the question, to what extent a model building on a single, discrete energy level can be sufficient to represent the complex electronic structure of the junction. We investigated the applicability of the aforementioned model especially in view of the vastly different coupling strength between substrates and molecules upon changing the docking chemistry. For this, we simulated the electronic structure of a wide range of molecular junctions using density functional theory based methods and calculated the current-voltage characteristics by employing the Landauer-Büttiger formalism. Finally, from these characteristics we fitted the energetic position of the above-mentioned discrete “transport” level. Its properties are then compared to the actual electronic structure of the junction.

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