Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.
Original languageEnglish
Title of host publication2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
PublisherIEEE Publications
Pages366-369
Number of pages4
ISBN (Electronic)978-1-4673-9494-9
ISBN (Print)978-1-4673-8310-3
DOIs
Publication statusPublished - 28 Jul 2016

Keywords

  • Logic gates
  • MOS devices
  • Transistors
  • CMOS integrated circuits
  • ionizing dose effects
  • RINCE
  • radiation hard design

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Radiation

Fields of Expertise

  • Information, Communication & Computing

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  • Cite this

    Bezhenova, V., & Michalowska-Forsyth, A. M. (2016). Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. In 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC) (pp. 366-369). IEEE Publications. https://doi.org/10.1109/APEMC.2016.7522739