Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Research output: Contribution to conferencePoster

Abstract

Abstract:
Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.
Original languageEnglish
Pages366-369
Number of pages4
Publication statusPublished - 28 Jul 2016
EventAsia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC) - Shenzhen, China
Duration: 18 May 201621 May 2016

Conference

ConferenceAsia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC)
CountryChina
CityShenzhen
Period18/05/1621/05/16

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  • Activities

    • 1 Poster presentation

    Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

    Varvara Bezhenova (Speaker)
    18 May 201621 May 2016

    Activity: Talk or presentationPoster presentationScience to science

    Cite this

    Bezhenova, V., & Michalowska-Forsyth, A. M. (2016). Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 366-369. Poster session presented at Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.