Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Research output: Contribution to conferencePosterResearchpeer-review

Abstract

Abstract:
Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

Conference

ConferenceAsia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC)
CountryChina
CityShenzhen
Period18/05/1621/05/16

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CMOS
transistors
dosage
radiation

Cite this

Bezhenova, V., & Michalowska-Forsyth, A. M. (2016). Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 366-369. Poster session presented at Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. / Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata.

2016. 366-369 Poster session presented at Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.

Research output: Contribution to conferencePosterResearchpeer-review

Bezhenova, V & Michalowska-Forsyth, AM 2016, 'Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology' Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China, 18/05/16 - 21/05/16, pp. 366-369.
Bezhenova V, Michalowska-Forsyth AM. Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 2016. Poster session presented at Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.
Bezhenova, Varvara ; Michalowska-Forsyth, Alicja Malgorzata. / Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. Poster session presented at Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.4 p.
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abstract = "Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.",
author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata}",
year = "2016",
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N2 - Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

AB - Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

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