Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

Lukas Zöscher; Peter Herkess; Jasmin Grosinger; Ulrich Muehlmann; Dominik Amschl; Hubert Watzinger; Wolfgang Bösch

doi:10.1109/Austrochip.2016.12

Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

Lukas Zöscher, Peter Herkess, Jasmin Grosinger, Ulrich Muehlmann, Dominik Amschl, Hubert Watzinger, Wolfgang Bösch

Institute of Microwave and Photonic Engineering (4510)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Circuit techniques termed as threshold voltage (V_th) compensation are utilized for CMOS RF-DC power converters or more specifically RF charge pumps to improve the power conversion efficiency at low levels of RF input voltage. In this work, we present two differential RF charge pumps for UHF RFID transponder ICs that include a V_th compensation. The first circuit uses gate biasing for V_th compensation, whereas the second circuit design follows a combined approach of gate and bulk biasing. The circuits have been manufactured in a 40nm low-power CMOS technology. Measurement results demonstrate that the power conversion efficiency can be improved from 39% to 42% at a given output power of 4μW and an output voltage of 1V by using bulk biasing. Both circuits show a low input quality factor of 13 at this output power level and allow therefore the implementation of highly sensitive broadband UHF RFID transponders.

Original language	English
Title of host publication	Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016
Publisher	Institute of Electrical and Electronics Engineers
Pages	30-34
Number of pages	5
ISBN (Electronic)	9781509010400
DOIs	https://doi.org/10.1109/Austrochip.2016.12
Publication status	Published - 10 Jan 2017
Event	24th Austrian Workshop on Microelectronics: Austrochip 2016 - Holiday Inn Hotel, Villach, Austria Duration: 19 Oct 2016 → 19 Oct 2016

Workshop

Workshop	24th Austrian Workshop on Microelectronics
Country/Territory	Austria
City	Villach
Period	19/10/16 → 19/10/16

Keywords

Charge pumps
Energy harvesting
Radiofrequency identification
Rectifiers
UHF integrated circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/Austrochip.2016.12

Cite this

Zöscher, L., Herkess, P., Grosinger, J., Muehlmann, U., Amschl, D., Watzinger, H., & Bösch, W. (2017). Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology. In Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016 (pp. 30-34). Article 7814009 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/Austrochip.2016.12

Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology. / Zöscher, Lukas; Herkess, Peter; Grosinger, Jasmin et al.
Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016. Institute of Electrical and Electronics Engineers, 2017. p. 30-34 7814009.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Zöscher, L, Herkess, P, Grosinger, J, Muehlmann, U, Amschl, D, Watzinger, H & Bösch, W 2017, Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology. in Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016., 7814009, Institute of Electrical and Electronics Engineers, pp. 30-34, 24th Austrian Workshop on Microelectronics, Villach, Austria, 19/10/16. https://doi.org/10.1109/Austrochip.2016.12

@inproceedings{0220544e50f24a5297cfdb4a063424d5,

title = "Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology",

abstract = "Circuit techniques termed as threshold voltage (Vth) compensation are utilized for CMOS RF-DC power converters or more specifically RF charge pumps to improve the power conversion efficiency at low levels of RF input voltage. In this work, we present two differential RF charge pumps for UHF RFID transponder ICs that include a Vth compensation. The first circuit uses gate biasing for Vth compensation, whereas the second circuit design follows a combined approach of gate and bulk biasing. The circuits have been manufactured in a 40nm low-power CMOS technology. Measurement results demonstrate that the power conversion efficiency can be improved from 39% to 42% at a given output power of 4μW and an output voltage of 1V by using bulk biasing. Both circuits show a low input quality factor of 13 at this output power level and allow therefore the implementation of highly sensitive broadband UHF RFID transponders.",

keywords = "Charge pumps, Energy harvesting, Radiofrequency identification, Rectifiers, UHF integrated circuits",

author = "Lukas Z{\"o}scher and Peter Herkess and Jasmin Grosinger and Ulrich Muehlmann and Dominik Amschl and Hubert Watzinger and Wolfgang B{\"o}sch",

year = "2017",

month = jan,

day = "10",

doi = "10.1109/Austrochip.2016.12",

language = "English",

pages = "30--34",

booktitle = "Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "24th Austrian Workshop on Microelectronics : Austrochip 2016 ; Conference date: 19-10-2016 Through 19-10-2016",

}

TY - GEN

T1 - Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

AU - Zöscher, Lukas

AU - Herkess, Peter

AU - Grosinger, Jasmin

AU - Muehlmann, Ulrich

AU - Amschl, Dominik

AU - Watzinger, Hubert

AU - Bösch, Wolfgang

PY - 2017/1/10

Y1 - 2017/1/10

N2 - Circuit techniques termed as threshold voltage (Vth) compensation are utilized for CMOS RF-DC power converters or more specifically RF charge pumps to improve the power conversion efficiency at low levels of RF input voltage. In this work, we present two differential RF charge pumps for UHF RFID transponder ICs that include a Vth compensation. The first circuit uses gate biasing for Vth compensation, whereas the second circuit design follows a combined approach of gate and bulk biasing. The circuits have been manufactured in a 40nm low-power CMOS technology. Measurement results demonstrate that the power conversion efficiency can be improved from 39% to 42% at a given output power of 4μW and an output voltage of 1V by using bulk biasing. Both circuits show a low input quality factor of 13 at this output power level and allow therefore the implementation of highly sensitive broadband UHF RFID transponders.

AB - Circuit techniques termed as threshold voltage (Vth) compensation are utilized for CMOS RF-DC power converters or more specifically RF charge pumps to improve the power conversion efficiency at low levels of RF input voltage. In this work, we present two differential RF charge pumps for UHF RFID transponder ICs that include a Vth compensation. The first circuit uses gate biasing for Vth compensation, whereas the second circuit design follows a combined approach of gate and bulk biasing. The circuits have been manufactured in a 40nm low-power CMOS technology. Measurement results demonstrate that the power conversion efficiency can be improved from 39% to 42% at a given output power of 4μW and an output voltage of 1V by using bulk biasing. Both circuits show a low input quality factor of 13 at this output power level and allow therefore the implementation of highly sensitive broadband UHF RFID transponders.

KW - Charge pumps

KW - Energy harvesting

KW - Radiofrequency identification

KW - Rectifiers

KW - UHF integrated circuits

UR - http://www.scopus.com/inward/record.url?scp=85013744187&partnerID=8YFLogxK

U2 - 10.1109/Austrochip.2016.12

DO - 10.1109/Austrochip.2016.12

M3 - Conference paper

AN - SCOPUS:85013744187

SP - 30

EP - 34

BT - Proceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016

PB - Institute of Electrical and Electronics Engineers

T2 - 24th Austrian Workshop on Microelectronics

Y2 - 19 October 2016 through 19 October 2016

ER -

Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

Abstract

Workshop

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Radio Frequency Identification (RFID) Technologies

Wireless Power Transmission for Sustainable Electronics (WIPE)

Dessnet - Dependable, secure and time-aware sensor networks

Cite this

Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

Abstract

Workshop

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Radio Frequency Identification (RFID) Technologies

Wireless Power Transmission for Sustainable Electronics (WIPE)

Dessnet - Dependable, secure and time-aware sensor networks

Cite this