Thermal Mapping of Power Semiconductors in H-Bridge Circuit

Dao Zhou; Yingzhou Peng; Francesco Iannuzzo; Michael Hartmann; Frede Blaabjerg

doi:10.3390/app10124340

Thermal Mapping of Power Semiconductors in H-Bridge Circuit

Dao Zhou, Yingzhou Peng, Francesco Iannuzzo, Michael Hartmann, Frede Blaabjerg^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

Original language	English
Article number	4340
Journal	Applied Sciences
Volume	10
Issue number	12
DOIs	https://doi.org/10.3390/app10124340
Publication status	Published - 24 Jun 2020
Externally published	Yes

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10.3390/app10124340Licence: CC BY 4.0

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title = "Thermal Mapping of Power Semiconductors in H-Bridge Circuit",

abstract = "In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors{\textquoteright} (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.",

author = "Dao Zhou and Yingzhou Peng and Francesco Iannuzzo and Michael Hartmann and Frede Blaabjerg",

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AU - Zhou, Dao

AU - Peng, Yingzhou

AU - Iannuzzo, Francesco

AU - Hartmann, Michael

AU - Blaabjerg, Frede

PY - 2020/6/24

Y1 - 2020/6/24

N2 - In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

AB - In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

UR - http://dx.doi.org/10.3390/app10124340

U2 - 10.3390/app10124340

DO - 10.3390/app10124340

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SN - 2076-3417

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JO - Applied Sciences

JF - Applied Sciences

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ER -

Thermal Mapping of Power Semiconductors in H-Bridge Circuit

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