The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteries

Niloofar Soltani, Syed Muhammad Abbas, Martin Hantusch, Sebastian Lehmann, Kornelius Nielsch, Amin Bahrami, Daria Mikhailova*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The electrochemical performances of CoSn2 and Ni3Sn4 as potential anode materials in lithium-ion batteries (LIBs) are investigated using varying thicknesses of an alumina layer deposited by the atomic layer deposition (ALD) technique. Rate capability results showed that at high current densities, Al2O3-coated CoSn2 and Ni3Sn4 electrodes after 10-ALD cycles outperformed uncoated materials. The charge capacities of coated CoSn2 and Ni3Sn4 electrodes are 571 and 134 mAh g−1, respectively, at a high current density of 5 A g−1, while the capacities of uncoated electrodes are 363 and 11 mAh g−1. When the current density is reduced to 1 A g−1, however, the cycling performances of Al2O3-coated CoSn2 and Ni3Sn4 electrodes fade faster after almost 40 cycles than uncoated electrodes. The explanation is found in the composition of the solid-electrolyte interface (SEI), which strongly depends on the current rate. Thus, X-ray photoelectron spectroscopy analysis of SEI layers on coated samples cycles at a low current density of 0.1 Ag−1, revealed organic carbonates as major products, which probably have a low ionic conductivity. In contrast, the SEI of coated materials cycled at 5 Ag−1 consists mostly of mixed inorganic/organic fluorine-rich Al-F and C-F species facilitating a higher ionic transport, which improves electrochemical performance.

Original languageEnglish
Article number2201598
JournalAdvanced Materials Interfaces
Volume9
Issue number34
DOIs
Publication statusPublished - 2 Dec 2022

Keywords

  • anode materials
  • atomic layer deposition
  • CoSn
  • Li-ion batteries
  • Ni Sn

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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