The formation of silicon carbide films from disilane derivatives

Edwin Hengge, Arno Zechmann, Ferdinand Hofer, Peter Pölt, Benno Lux

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)584-587
JournalAdvanced Materials
Volume6
Publication statusPublished - 1994

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Experimental

Cite this

The formation of silicon carbide films from disilane derivatives. / Hengge, Edwin; Zechmann, Arno; Hofer, Ferdinand; Pölt, Peter; Lux, Benno.

In: Advanced Materials, Vol. 6, 1994, p. 584-587.

Research output: Contribution to journalArticleResearchpeer-review

Hengge, Edwin ; Zechmann, Arno ; Hofer, Ferdinand ; Pölt, Peter ; Lux, Benno. / The formation of silicon carbide films from disilane derivatives. In: Advanced Materials. 1994 ; Vol. 6. pp. 584-587.
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