TY - JOUR
T1 - The Essence of Three-Phase PFC Rectifier Systems—Part II
AU - Thomas, Friedli
AU - Hartmann, Michael
AU - Kolar, Johann W.
PY - 2014/2
Y1 - 2014/2
N2 - The second part of the essence of three-phase PFC Rectifier Systems is dedicated to a comparative evaluation of four active three-phase PFC rectifiers that are of interest for industrial application: the active six-switch boost-type PFC rectifier, the Vienna Rectifier (VR), the active six-switch buck-type PFC rectifier, and the Swiss Rectifier. Typical dynamic feed-back control structures of the considered topologies are shown, and analytical equations for calculating the current stresses of the power semiconductors are provided. In addition, EMI filtering is discussed. The rectifier systems are assessed and compared based on simple and demonstrative performance indices such as the semiconductor stresses, the required semiconductor chip area, the volume of the main passive components, the DM and CM conducted EMI noise levels, and the efficiency. Two implementation variants, a more advanced one using SiC JFETs and SiC Schottky diodes and one using Si IGBTs and SiC Schottky diodes, are considered. The comparison is extended with selected examples of hardware demonstrators of VR systems that are optimized for efficiency and/or power density. This allows to determine the tradeoff between efficiency and power density and to quantify a typical efficiency versus power density limit (Pareto-Front) for practical three-phase PFC rectifier systems using standard printed circuit board interconnection technology.
AB - The second part of the essence of three-phase PFC Rectifier Systems is dedicated to a comparative evaluation of four active three-phase PFC rectifiers that are of interest for industrial application: the active six-switch boost-type PFC rectifier, the Vienna Rectifier (VR), the active six-switch buck-type PFC rectifier, and the Swiss Rectifier. Typical dynamic feed-back control structures of the considered topologies are shown, and analytical equations for calculating the current stresses of the power semiconductors are provided. In addition, EMI filtering is discussed. The rectifier systems are assessed and compared based on simple and demonstrative performance indices such as the semiconductor stresses, the required semiconductor chip area, the volume of the main passive components, the DM and CM conducted EMI noise levels, and the efficiency. Two implementation variants, a more advanced one using SiC JFETs and SiC Schottky diodes and one using Si IGBTs and SiC Schottky diodes, are considered. The comparison is extended with selected examples of hardware demonstrators of VR systems that are optimized for efficiency and/or power density. This allows to determine the tradeoff between efficiency and power density and to quantify a typical efficiency versus power density limit (Pareto-Front) for practical three-phase PFC rectifier systems using standard printed circuit board interconnection technology.
UR - http://dx.doi.org/10.1109/tpel.2013.2258472
U2 - 10.1109/tpel.2013.2258472
DO - 10.1109/tpel.2013.2258472
M3 - Article
SN - 0885-8993
VL - 39
SP - 543
EP - 560
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 2
ER -