Temperature Induced Effects on Laser Speckle in a Laser Measurement Device

Christian Mentin, Eugen Brenner, Robin Priewald

Research output: Contribution to conferenceAbstractResearchpeer-review

Abstract

Semiconductor manufacturers are seeking for
fast and precise
measurements of the wafer edge. Especially when wafers are getting thinner, the more likely they break. This breakage could be caused by insensitive handling or originate from broken and chipped wafer edges. A novel contactless screening laser Wafer Edge Screener micrometer, called Wafer Edge Screener, which inspects wafer edges during common pre-alignment processes, can profile the wafer edge thickness and quantify upper and lower edge defects. The proposed measurement setup relies on multiple exposures of the wafer edge onto a light sensitive detector using point light sources, such as Laserdiodes. By evaluating the projected edge position on the light sensitive detector, the X/Y position of the wafer edge can be determined. The overall measurement accuracy is strongly influenced by the edge prediction techniques used, the light source, and furthermore some other parasitic effects. To achieve subpixel accuracy for determining the projected edge position on the detector, effects regarding laser speckles were investigated. In the test setup, a thin edge was continuously moved in parallel to the sensor, which results in a continuous movement of the projected diffraction pattern and its contained features on the sensor. By tracking these features, irregularities of their movement caused by temperature dependent Laser speckle can be investigated.
Original languageEnglish
Publication statusPublished - 22 Nov 2017
Event3rd International Conference on Integrated Functional Nano Systems - KFU Graz, Graz, Austria
Duration: 22 Nov 201724 Nov 2017
http://nanofis.net/

Conference

Conference3rd International Conference on Integrated Functional Nano Systems
Abbreviated titlenanoFis 2017
CountryAustria
CityGraz
Period22/11/1724/11/17
Internet address

Fingerprint

wafers
lasers
temperature
detectors
light sources
sensors
irregularities
micrometers
diffraction patterns
screening
alignment
defects
profiles
predictions

Keywords

  • Laser speckle;

Cite this

Mentin, C., Brenner, E., & Priewald, R. (2017). Temperature Induced Effects on Laser Speckle in a Laser Measurement Device. Abstract from 3rd International Conference on Integrated Functional Nano Systems, Graz, Austria.

Temperature Induced Effects on Laser Speckle in a Laser Measurement Device. / Mentin, Christian; Brenner, Eugen; Priewald, Robin.

2017. Abstract from 3rd International Conference on Integrated Functional Nano Systems, Graz, Austria.

Research output: Contribution to conferenceAbstractResearchpeer-review

Mentin, C, Brenner, E & Priewald, R 2017, 'Temperature Induced Effects on Laser Speckle in a Laser Measurement Device' 3rd International Conference on Integrated Functional Nano Systems, Graz, Austria, 22/11/17 - 24/11/17, .
Mentin C, Brenner E, Priewald R. Temperature Induced Effects on Laser Speckle in a Laser Measurement Device. 2017. Abstract from 3rd International Conference on Integrated Functional Nano Systems, Graz, Austria.
Mentin, Christian ; Brenner, Eugen ; Priewald, Robin. / Temperature Induced Effects on Laser Speckle in a Laser Measurement Device. Abstract from 3rd International Conference on Integrated Functional Nano Systems, Graz, Austria.
@conference{939a28affda14399b7433d8dc3839290,
title = "Temperature Induced Effects on Laser Speckle in a Laser Measurement Device",
abstract = "Semiconductor manufacturers are seeking forfast and precisemeasurements of the wafer edge. Especially when wafers are getting thinner, the more likely they break. This breakage could be caused by insensitive handling or originate from broken and chipped wafer edges. A novel contactless screening laser Wafer Edge Screener micrometer, called Wafer Edge Screener, which inspects wafer edges during common pre-alignment processes, can profile the wafer edge thickness and quantify upper and lower edge defects. The proposed measurement setup relies on multiple exposures of the wafer edge onto a light sensitive detector using point light sources, such as Laserdiodes. By evaluating the projected edge position on the light sensitive detector, the X/Y position of the wafer edge can be determined. The overall measurement accuracy is strongly influenced by the edge prediction techniques used, the light source, and furthermore some other parasitic effects. To achieve subpixel accuracy for determining the projected edge position on the detector, effects regarding laser speckles were investigated. In the test setup, a thin edge was continuously moved in parallel to the sensor, which results in a continuous movement of the projected diffraction pattern and its contained features on the sensor. By tracking these features, irregularities of their movement caused by temperature dependent Laser speckle can be investigated.",
keywords = "Laser speckle;",
author = "Christian Mentin and Eugen Brenner and Robin Priewald",
year = "2017",
month = "11",
day = "22",
language = "English",
note = "3rd International Conference on Integrated Functional Nano Systems, nanoFis 2017 ; Conference date: 22-11-2017 Through 24-11-2017",
url = "http://nanofis.net/",

}

TY - CONF

T1 - Temperature Induced Effects on Laser Speckle in a Laser Measurement Device

AU - Mentin, Christian

AU - Brenner, Eugen

AU - Priewald, Robin

PY - 2017/11/22

Y1 - 2017/11/22

N2 - Semiconductor manufacturers are seeking forfast and precisemeasurements of the wafer edge. Especially when wafers are getting thinner, the more likely they break. This breakage could be caused by insensitive handling or originate from broken and chipped wafer edges. A novel contactless screening laser Wafer Edge Screener micrometer, called Wafer Edge Screener, which inspects wafer edges during common pre-alignment processes, can profile the wafer edge thickness and quantify upper and lower edge defects. The proposed measurement setup relies on multiple exposures of the wafer edge onto a light sensitive detector using point light sources, such as Laserdiodes. By evaluating the projected edge position on the light sensitive detector, the X/Y position of the wafer edge can be determined. The overall measurement accuracy is strongly influenced by the edge prediction techniques used, the light source, and furthermore some other parasitic effects. To achieve subpixel accuracy for determining the projected edge position on the detector, effects regarding laser speckles were investigated. In the test setup, a thin edge was continuously moved in parallel to the sensor, which results in a continuous movement of the projected diffraction pattern and its contained features on the sensor. By tracking these features, irregularities of their movement caused by temperature dependent Laser speckle can be investigated.

AB - Semiconductor manufacturers are seeking forfast and precisemeasurements of the wafer edge. Especially when wafers are getting thinner, the more likely they break. This breakage could be caused by insensitive handling or originate from broken and chipped wafer edges. A novel contactless screening laser Wafer Edge Screener micrometer, called Wafer Edge Screener, which inspects wafer edges during common pre-alignment processes, can profile the wafer edge thickness and quantify upper and lower edge defects. The proposed measurement setup relies on multiple exposures of the wafer edge onto a light sensitive detector using point light sources, such as Laserdiodes. By evaluating the projected edge position on the light sensitive detector, the X/Y position of the wafer edge can be determined. The overall measurement accuracy is strongly influenced by the edge prediction techniques used, the light source, and furthermore some other parasitic effects. To achieve subpixel accuracy for determining the projected edge position on the detector, effects regarding laser speckles were investigated. In the test setup, a thin edge was continuously moved in parallel to the sensor, which results in a continuous movement of the projected diffraction pattern and its contained features on the sensor. By tracking these features, irregularities of their movement caused by temperature dependent Laser speckle can be investigated.

KW - Laser speckle;

M3 - Abstract

ER -