Temperature dependence of the electrical properties of single-crystals of dithiophene-tetrathiafulvalene (DT-TTF)

M. Mas-Torrent*, P. Hadley, X. Ribas, C. Rovira

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Organic single-crystal field-effect transistors based on dithiophene-tetrathiafulvalene (DT-TTF) showing a charge-carrier mobility of 1.4 cm2/V s were recently reported. These crystals were prepared from solution, making this material interesting for potential applications in low-cost electronics. Here, we studied the temperature dependence of a DT-TTF field-effect transistor as well as the transport properties of single DT-TTF crystals. We found that the field-effect mobility follows a thermally activated hopping model with activation energy values (Ea) of around 85 meV, which is in agreement with the standard four-contact conductivity measurements performed on the single-crystals. In addition, the dependence of the E a with temperature and of the threshold voltage with gate-induced charge suggest that the crystals do not contain deep impurity traps.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalSynthetic metals
Volume146
Issue number3
DOIs
Publication statusPublished - 3 Nov 2004
Externally publishedYes

Keywords

  • Dithiophene-tetrathiafulvalene (DT-TTF)
  • Field-effect transistors
  • Single DT-TTF crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

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