Abstract
Organic single-crystal field-effect transistors based on dithiophene-tetrathiafulvalene (DT-TTF) showing a charge-carrier mobility of 1.4 cm2/V s were recently reported. These crystals were prepared from solution, making this material interesting for potential applications in low-cost electronics. Here, we studied the temperature dependence of a DT-TTF field-effect transistor as well as the transport properties of single DT-TTF crystals. We found that the field-effect mobility follows a thermally activated hopping model with activation energy values (Ea) of around 85 meV, which is in agreement with the standard four-contact conductivity measurements performed on the single-crystals. In addition, the dependence of the E a with temperature and of the threshold voltage with gate-induced charge suggest that the crystals do not contain deep impurity traps.
Original language | English |
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Pages (from-to) | 265-268 |
Number of pages | 4 |
Journal | Synthetic Metals |
Volume | 146 |
Issue number | 3 |
DOIs | |
Publication status | Published - 3 Nov 2004 |
Externally published | Yes |
Keywords
- Dithiophene-tetrathiafulvalene (DT-TTF)
- Field-effect transistors
- Single DT-TTF crystals
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Polymers and Plastics