Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors

Karin Zojer, Thomas Rothländer, Johanna Kraxner, Roland Schmied, Ursula Palfinger, Harald Plank, Werner Grogger, Anja Haase, Herbert Gold, Barbara Stadlober

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.
Original languageEnglish
Article number31387
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors. / Zojer, Karin; Rothländer, Thomas; Kraxner, Johanna; Schmied, Roland; Palfinger, Ursula; Plank, Harald; Grogger, Werner; Haase, Anja; Gold, Herbert; Stadlober, Barbara.

In: Scientific reports, Vol. 6, 31387, 2016.

Research output: Contribution to journalArticleResearchpeer-review

Zojer, Karin ; Rothländer, Thomas ; Kraxner, Johanna ; Schmied, Roland ; Palfinger, Ursula ; Plank, Harald ; Grogger, Werner ; Haase, Anja ; Gold, Herbert ; Stadlober, Barbara. / Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors. In: Scientific reports. 2016 ; Vol. 6.
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AU - Zojer, Karin

AU - Rothländer, Thomas

AU - Kraxner, Johanna

AU - Schmied, Roland

AU - Palfinger, Ursula

AU - Plank, Harald

AU - Grogger, Werner

AU - Haase, Anja

AU - Gold, Herbert

AU - Stadlober, Barbara

PY - 2016

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AB - Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.

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