Stabilization of semiconductor surfaces through bulk dopants

Nikolaj Moll*, Yong Xu, Oliver T. Hofmann, Patrick Rinke

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We show by employing density-functional theory calculations (including a hybrid functional) that ZnO surfaces can be stabilized by bulk dopants. As an example, we study the bulk-terminated ZnO (0001̄) surface covered with half a monolayer of hydrogen.We demonstrate that deviations from this half-monolayer coverage can be stabilized by electrons or holes from bulk dopants. The electron chemical potential therefore becomes a crucial parameter that cannot be neglected in semiconductor surface studies. As one result, we find that to form the defect-free surface with a half-monolayer coverage of hydrogen for n-type ZnO, ambient hydrogen background pressures are more conducive than high vacuum pressures.

Original languageEnglish
Article number083009
JournalNew Journal of Physics
Volume15
DOIs
Publication statusPublished - 1 Aug 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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