Solution-Processable Septithiophene Monolayer Transistor

Matthieu Defaux, Fatemeh Gholamrezaie, Jingbo Wang, Andreas Kreyes, Ulrich Ziener, Denis V. Anokhin, Dimitri A. Ivanov, Armin Moser, Alfred Neuhold, Roland Resel, Dago M. de Leeuw, Stefan C. J. Meskers, Martin Moeller, Ahmed Mourran

Research output: Contribution to journalArticleResearchpeer-review

Original languageGerman
Pages (from-to)973-978
JournalAdvanced Materials
Issue number7
Publication statusPublished - 2012

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Application
  • Experimental

Cite this

Defaux, M., Gholamrezaie, F., Wang, J., Kreyes, A., Ziener, U., Anokhin, D. V., ... Mourran, A. (2012). Solution-Processable Septithiophene Monolayer Transistor. Advanced Materials, 24(7), 973-978.

Solution-Processable Septithiophene Monolayer Transistor. / Defaux, Matthieu; Gholamrezaie, Fatemeh; Wang, Jingbo; Kreyes, Andreas; Ziener, Ulrich; Anokhin, Denis V.; Ivanov, Dimitri A.; Moser, Armin; Neuhold, Alfred; Resel, Roland; de Leeuw, Dago M.; Meskers, Stefan C. J.; Moeller, Martin; Mourran, Ahmed.

In: Advanced Materials, Vol. 24, No. 7, 2012, p. 973-978.

Research output: Contribution to journalArticleResearchpeer-review

Defaux, M, Gholamrezaie, F, Wang, J, Kreyes, A, Ziener, U, Anokhin, DV, Ivanov, DA, Moser, A, Neuhold, A, Resel, R, de Leeuw, DM, Meskers, SCJ, Moeller, M & Mourran, A 2012, 'Solution-Processable Septithiophene Monolayer Transistor' Advanced Materials, vol. 24, no. 7, pp. 973-978.
Defaux M, Gholamrezaie F, Wang J, Kreyes A, Ziener U, Anokhin DV et al. Solution-Processable Septithiophene Monolayer Transistor. Advanced Materials. 2012;24(7):973-978.
Defaux, Matthieu ; Gholamrezaie, Fatemeh ; Wang, Jingbo ; Kreyes, Andreas ; Ziener, Ulrich ; Anokhin, Denis V. ; Ivanov, Dimitri A. ; Moser, Armin ; Neuhold, Alfred ; Resel, Roland ; de Leeuw, Dago M. ; Meskers, Stefan C. J. ; Moeller, Martin ; Mourran, Ahmed. / Solution-Processable Septithiophene Monolayer Transistor. In: Advanced Materials. 2012 ; Vol. 24, No. 7. pp. 973-978.
title = "Solution-Processable Septithiophene Monolayer Transistor",
author = "Matthieu Defaux and Fatemeh Gholamrezaie and Jingbo Wang and Andreas Kreyes and Ulrich Ziener and Anokhin, {Denis V.} and Ivanov, {Dimitri A.} and Armin Moser and Alfred Neuhold and Roland Resel and {de Leeuw}, {Dago M.} and Meskers, {Stefan C. J.} and Martin Moeller and Ahmed Mourran",
year = "2012",
doi = "10.1002/adma.201103522",
language = "deutsch",
volume = "24",
pages = "973--978",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH",
number = "7",



T1 - Solution-Processable Septithiophene Monolayer Transistor

AU - Defaux, Matthieu

AU - Gholamrezaie, Fatemeh

AU - Wang, Jingbo

AU - Kreyes, Andreas

AU - Ziener, Ulrich

AU - Anokhin, Denis V.

AU - Ivanov, Dimitri A.

AU - Moser, Armin

AU - Neuhold, Alfred

AU - Resel, Roland

AU - de Leeuw, Dago M.

AU - Meskers, Stefan C. J.

AU - Moeller, Martin

AU - Mourran, Ahmed

PY - 2012

Y1 - 2012

UR -

U2 - 10.1002/adma.201103522

DO - 10.1002/adma.201103522

M3 - Artikel

VL - 24

SP - 973

EP - 978

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 7

ER -