Simulation of the proton implantation process in silicon

Martin Faccinelli, Moriz Jelinek, Thomas Wuebben, Johannes G. Laven, Hans-Joachim Schulze, Peter Hadley

Research output: Contribution to journalArticle

Original languageEnglish
Number of pages6
JournalPhysica status solidi / C
DOIs
Publication statusPublished - 19 Jul 2016

Keywords

  • proton implantation
  • defect complexes
  • process simulation
  • diffusion-reaction-dissociation

Fields of Expertise

  • Advanced Materials Science

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