Simulation of the proton implantation process in silicon

Martin Faccinelli, Moriz Jelinek, Thomas Wuebben, Johannes G. Laven, Hans-Joachim Schulze, Peter Hadley

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Number of pages6
JournalPhysica status solidi / C
DOIs
Publication statusPublished - 19 Jul 2016

Keywords

  • proton implantation
  • defect complexes
  • process simulation
  • diffusion-reaction-dissociation

Fields of Expertise

  • Advanced Materials Science

Cite this

Simulation of the proton implantation process in silicon. / Faccinelli, Martin; Jelinek, Moriz; Wuebben, Thomas ; Laven, Johannes G.; Schulze, Hans-Joachim; Hadley, Peter.

In: Physica status solidi / C, 19.07.2016.

Research output: Contribution to journalArticleResearchpeer-review

Faccinelli, Martin ; Jelinek, Moriz ; Wuebben, Thomas ; Laven, Johannes G. ; Schulze, Hans-Joachim ; Hadley, Peter. / Simulation of the proton implantation process in silicon. In: Physica status solidi / C. 2016.
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