Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver

Christian Ertler, Ferdinand Schürrer

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)979-994
JournalCOMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
Volume25
Publication statusPublished - 2006

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

@article{f01e0c046b824c5a8fbb7fbfc9ab14fb,
title = "Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver",
author = "Christian Ertler and Ferdinand Sch{\"u}rrer",
year = "2006",
language = "English",
volume = "25",
pages = "979--994",
journal = "COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering",
issn = "0332-1649",
publisher = "Emerald Group Publishing Ltd.",

}

TY - JOUR

T1 - Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver

AU - Ertler, Christian

AU - Schürrer, Ferdinand

PY - 2006

Y1 - 2006

M3 - Article

VL - 25

SP - 979

EP - 994

JO - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

JF - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

SN - 0332-1649

ER -