Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

Günther Lientschnig; Irek Weymann; Peter Hadley

Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

Günther Lientschnig^*, Irek Weymann, Peter Hadley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An exact model for a single-electron transistor was developed within the circuit simulation package SPICE. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor as a function of the bias voltage, the gate voltage, and the temperature. Circuits including single-electron transistors,' field-effect transistors (FETs), and operational amplifiers were then simulated. In these circuits, the single-electron transistors provide the charge sensitivity while the FETs tune the background charges, provide gain, and provide low output impedance.

Original language	English
Pages (from-to)	6467-6472
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	10
Publication status	Published - Oct 2003
Externally published	Yes

Keywords

Background charge problem
Charge-locked loop
Circuit simulation
Device modeling
Hybrid SET-FET circuits
Orthodox theory
Ring oscillator
SET
Single-electron tunneling
SPICE

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Cite this

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title = "Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors",

abstract = "An exact model for a single-electron transistor was developed within the circuit simulation package SPICE. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor as a function of the bias voltage, the gate voltage, and the temperature. Circuits including single-electron transistors,' field-effect transistors (FETs), and operational amplifiers were then simulated. In these circuits, the single-electron transistors provide the charge sensitivity while the FETs tune the background charges, provide gain, and provide low output impedance.",

keywords = "Background charge problem, Charge-locked loop, Circuit simulation, Device modeling, Hybrid SET-FET circuits, Orthodox theory, Ring oscillator, SET, Single-electron tunneling, SPICE",

author = "G{\"u}nther Lientschnig and Irek Weymann and Peter Hadley",

year = "2003",

month = oct,

language = "English",

volume = "42",

pages = "6467--6472",

journal = " Japanese Journal of Applied Physics ",

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T1 - Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

AU - Lientschnig, Günther

AU - Weymann, Irek

AU - Hadley, Peter

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N2 - An exact model for a single-electron transistor was developed within the circuit simulation package SPICE. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor as a function of the bias voltage, the gate voltage, and the temperature. Circuits including single-electron transistors,' field-effect transistors (FETs), and operational amplifiers were then simulated. In these circuits, the single-electron transistors provide the charge sensitivity while the FETs tune the background charges, provide gain, and provide low output impedance.

AB - An exact model for a single-electron transistor was developed within the circuit simulation package SPICE. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor as a function of the bias voltage, the gate voltage, and the temperature. Circuits including single-electron transistors,' field-effect transistors (FETs), and operational amplifiers were then simulated. In these circuits, the single-electron transistors provide the charge sensitivity while the FETs tune the background charges, provide gain, and provide low output impedance.

KW - Background charge problem

KW - Charge-locked loop

KW - Circuit simulation

KW - Device modeling

KW - Hybrid SET-FET circuits

KW - Orthodox theory

KW - Ring oscillator

KW - SET

KW - Single-electron tunneling

KW - SPICE

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M3 - Article

AN - SCOPUS:0348220484

SN - 0021-4922

VL - 42

SP - 6467

EP - 6472

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

Abstract

Keywords

ASJC Scopus subject areas

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