Self-energy corrections to the local density band structure of semiconductors and insulators

W. von der Linden; P. Horsch; Wolf-Dieter Lukas

doi:10.1016/0038-1098(86)90693-9

Self-energy corrections to the local density band structure of semiconductors and insulators

W. von der Linden, P. Horsch, Wolf-Dieter Lukas

Research output: Contribution to journal › Article › peer-review

Abstract

A formalism is proposed that allows an efficient computation of the exchange-correlation functional including the nonlocal exchange and dynamical screening correctly. In combination with LDA band structures this functional leads to remarkably good results for semiconductors and even wide gap insulators. The model furthermore provides a qualitative understanding of electronic many-body effects.

Original language	English
Pages (from-to)	485-490
Number of pages	6
Journal	Solid State Communications
Volume	59
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(86)90693-9
Publication status	Published - 1 Aug 1986
Externally published	Yes

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https://www.sciencedirect.com/science/article/pii/0038109886906939

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title = "Self-energy corrections to the local density band structure of semiconductors and insulators",

abstract = "A formalism is proposed that allows an efficient computation of the exchange-correlation functional including the nonlocal exchange and dynamical screening correctly. In combination with LDA band structures this functional leads to remarkably good results for semiconductors and even wide gap insulators. The model furthermore provides a qualitative understanding of electronic many-body effects.",

author = "{von der Linden}, W. and P. Horsch and Wolf-Dieter Lukas",

year = "1986",

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doi = "10.1016/0038-1098(86)90693-9",

language = "English",

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T1 - Self-energy corrections to the local density band structure of semiconductors and insulators

AU - von der Linden, W.

AU - Horsch, P.

AU - Lukas, Wolf-Dieter

PY - 1986/8/1

Y1 - 1986/8/1

N2 - A formalism is proposed that allows an efficient computation of the exchange-correlation functional including the nonlocal exchange and dynamical screening correctly. In combination with LDA band structures this functional leads to remarkably good results for semiconductors and even wide gap insulators. The model furthermore provides a qualitative understanding of electronic many-body effects.

AB - A formalism is proposed that allows an efficient computation of the exchange-correlation functional including the nonlocal exchange and dynamical screening correctly. In combination with LDA band structures this functional leads to remarkably good results for semiconductors and even wide gap insulators. The model furthermore provides a qualitative understanding of electronic many-body effects.

U2 - 10.1016/0038-1098(86)90693-9

DO - 10.1016/0038-1098(86)90693-9

M3 - Article

SN - 0038-1098

VL - 59

SP - 485

EP - 490

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Self-energy corrections to the local density band structure of semiconductors and insulators

Abstract

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