Race conditions among protection devices for a high speed I/O interface

Jianchi Zhou*, Javad Meiguni, Sergej Bub, Steffen Holland, Guido Notermans, Yang Xu, Giorgi Maghlakelidze, David Pommerenke, Daryl Beetner

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review

Abstract

–The ESD coupling path and on-board impedances strongly affect the ESD rise time seen on a PCB trace. Possible race conditions between external and on-die ESD protection were studied using measurement-based models of the transient response and on-board passives. Results show the interplay of rise time and protection turn-on can prevent the external TVS from responding in time.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium 2020, Proceedings - EOS/ESD 2020
PublisherESD Association
ISBN (Electronic)9781728194615
Publication statusPublished - 13 Sep 2020
Event42nd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2020 - Reno, United States
Duration: 13 Sep 202018 Sep 2020

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2020-September
ISSN (Print)0739-5159

Conference

Conference42nd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2020
CountryUnited States
CityReno
Period13/09/2018/09/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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