Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2019 Austrochip Workshop on Microelectronics
Subtitle of host publicationAustrochip 2019
Place of PublicationVienna
PublisherCPS, IEEE Xplore
Pages55
Number of pages58
ISBN (Electronic)978-1-7281-1953-3
Publication statusPublished - 24 Oct 2019
Event27th Austrochip Workshop on Microelectronics: Austrochip 2019 - FH Technikum Wien, Wien, Austria
Duration: 24 Oct 201924 Oct 2019
Conference number: 27
https://embsys.technikum-wien.at/austrochip2019/
https://embsys.technikum-wien.at/austrochip2019/program/index.htm

Workshop

Workshop27th Austrochip Workshop on Microelectronics
Abbreviated titleAustrochip
CountryAustria
CityWien
Period24/10/1924/10/19
Internet address

Keywords

  • Nonvolatile Memories
  • Radiation Hardness
  • Total Ionizing Dose

Cite this