Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Research output: Contribution to conferencePaperResearchpeer-review

Original languageEnglish
DOIs
Publication statusPublished - 24 Oct 2019
Event27th Austrochip Workshop on Microelectronics: Austrochip 2019 - FH Technikum Wien, Wien, Austria
Duration: 24 Oct 201924 Oct 2019
Conference number: 27
https://embsys.technikum-wien.at/austrochip2019/
https://embsys.technikum-wien.at/austrochip2019/program/index.htm

Workshop

Workshop27th Austrochip Workshop on Microelectronics
Abbreviated titleAustrochip
CountryAustria
CityWien
Period24/10/1924/10/19
Internet address

Keywords

  • Nonvolatile Memories
  • Integrated Circuits
  • Total Ionizing Dose
  • Radiation Hardness

Cite this

Vincenzi, T., Schatzberger, G., & Michalowska-Forsyth, A. M. (2019). Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell. Paper presented at 27th Austrochip Workshop on Microelectronics, Wien, Austria. https://doi.org/10.1109/Austrochip.2019.00021