Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

Jo-Hyon Noh; Michael G. Stanford; Bret B. Lewis; Jason D. Fowlkes; Harald Plank; Philip D. Rack

doi:10.1007/s00339-014-8745-0

Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

Jo-Hyon Noh, Michael G. Stanford, Bret B. Lewis, Jason D. Fowlkes, Harald Plank, Philip D. Rack^*

^*Corresponding author for this work

Institute of Electron Microscopy and Nanoanalysis (5190)

Research output: Contribution to journal › Article › peer-review

Abstract

One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

Original language	English
Pages (from-to)	1705-1713
Journal	Applied Physics A: Materials Science and Processing
Volume	117
Issue number	4
DOIs	https://doi.org/10.1007/s00339-014-8745-0
Publication status	Published - 2014

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Application
Experimental

Access to Document

10.1007/s00339-014-8745-0

Functional Nanofabrication
Dohr, J., Plank, H., Rosker, S., Winkler, R., Stermitz, M., Reisecker, V., Michelitsch, S. G. W., Brugger-Hatzl, M., Schmied, R., Eicher, B., Orthacker, A., Arnold, G., Sattelkow, J., Kolb, F., Ganner, T., Haselmann, U., Seewald, L. & Aschl, T.
1/01/09 → 31/12/23
Project: Research project

Cite this

@article{f20c7346e31e4f49b5cf64bfbc39cf1e,

title = "Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair",

abstract = "One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.",

author = "Jo-Hyon Noh and Stanford, {Michael G.} and Lewis, {Bret B.} and Fowlkes, {Jason D.} and Harald Plank and Rack, {Philip D.}",

year = "2014",

doi = "10.1007/s00339-014-8745-0",

language = "English",

volume = "117",

pages = "1705--1713",

journal = "Applied Physics A: Materials Science and Processing",

issn = "1432-0630 ",

publisher = "Springer Heidelberg",

number = "4",

}

TY - JOUR

T1 - Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

AU - Noh, Jo-Hyon

AU - Stanford, Michael G.

AU - Lewis, Bret B.

AU - Fowlkes, Jason D.

AU - Plank, Harald

AU - Rack, Philip D.

PY - 2014

Y1 - 2014

N2 - One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

AB - One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

U2 - 10.1007/s00339-014-8745-0

DO - 10.1007/s00339-014-8745-0

M3 - Article

SN - 1432-0630

VL - 117

SP - 1705

EP - 1713

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

Abstract

Fields of Expertise

Treatment code (Nähere Zuordnung)

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Projects

Functional Nanofabrication

Cite this