Multiscale approach to the electronic structure of doped semiconductor surfaces

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)075311-1-075311-16
JournalPhysical Review / B
DOIs
Publication statusPublished - 2015

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Theoretical

Cite this

Multiscale approach to the electronic structure of doped semiconductor surfaces. / Hofmann, Oliver.

In: Physical Review / B, 2015, p. 075311-1-075311-16.

Research output: Contribution to journalArticleResearchpeer-review

@article{a36c63db5c1e49f781fbefaff90eef03,
title = "Multiscale approach to the electronic structure of doped semiconductor surfaces",
author = "Oliver Hofmann",
year = "2015",
doi = "http://dx.doi.org/10.1103/PhysRevB.91.075311",
language = "English",
pages = "075311--1--075311--16",
journal = "Physical Review / B",
issn = "1098-0121",
publisher = "American Physical Society",

}

TY - JOUR

T1 - Multiscale approach to the electronic structure of doped semiconductor surfaces

AU - Hofmann, Oliver

PY - 2015

Y1 - 2015

UR - http://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.075311

U2 - http://dx.doi.org/10.1103/PhysRevB.91.075311

DO - http://dx.doi.org/10.1103/PhysRevB.91.075311

M3 - Article

SP - 075311-1-075311-16

JO - Physical Review / B

JF - Physical Review / B

SN - 1098-0121

ER -