Modeling of annular gate MOS transistors

Research output: Contribution to conferencePaperResearchpeer-review

Conference

ConferenceConference on Radiation Effects on Components and Systems
Abbreviated titleRADECS
CountrySweden
CityGothenburg
Period16/09/1821/09/18
Internet address

ASJC Scopus subject areas

  • Modelling and Simulation
  • Electrical and Electronic Engineering
  • Radiation

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Theoretical
  • Experimental

Cite this

Bezhenova, V., & Michalowska-Forsyth, A. M. (2018). Modeling of annular gate MOS transistors. Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden.

Modeling of annular gate MOS transistors. / Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata.

2018. Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden.

Research output: Contribution to conferencePaperResearchpeer-review

Bezhenova, V & Michalowska-Forsyth, AM 2018, 'Modeling of annular gate MOS transistors' Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden, 16/09/18 - 21/09/18, .
Bezhenova V, Michalowska-Forsyth AM. Modeling of annular gate MOS transistors. 2018. Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden.
Bezhenova, Varvara ; Michalowska-Forsyth, Alicja Malgorzata. / Modeling of annular gate MOS transistors. Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden.
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year = "2018",
month = "9",
language = "English",
note = "Conference on Radiation Effects on Components and Systems , RADECS ; Conference date: 16-09-2018 Through 21-09-2018",
url = "http://www.radecs2018.org/",

}

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AU - Bezhenova,Varvara

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M3 - Paper

ER -