Modeling of annular gate MOS transistors

Research output: Contribution to conferencePaperResearchpeer-review

Original languageEnglish
Publication statusPublished - Sep 2018
EventConference on Radiation Effects on Components and Systems - Gothenburg, Sweden
Duration: 16 Sep 201821 Sep 2018
http://www.radecs2018.org/

Conference

ConferenceConference on Radiation Effects on Components and Systems
Abbreviated titleRADECS
CountrySweden
CityGothenburg
Period16/09/1821/09/18
Internet address

ASJC Scopus subject areas

  • Modelling and Simulation
  • Electrical and Electronic Engineering
  • Radiation

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Theoretical
  • Experimental

Cite this

Bezhenova, V., & Michalowska-Forsyth, A. M. (2018). Modeling of annular gate MOS transistors. Paper presented at Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden.