Modeling of annular gate MOS transistor

Varvara Bezhenova

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationGothenburg
Publication statusSubmitted - Oct 2018
EventConference on Radiation Effects on Components and Systems - Gothenburg, Sweden
Duration: 16 Sep 201821 Sep 2018
http://www.radecs2018.org/

Conference

ConferenceConference on Radiation Effects on Components and Systems
Abbreviated titleRADECS
CountrySweden
CityGothenburg
Period16/09/1821/09/18
Internet address

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Modelling and Simulation

Activities

  • 1 Conference or symposium (Participation in/Organisation of)
  • 1 Poster presentation

Conference on Radiation Effects on Components and Systems

Varvara Bezhenova (Participant), Alicja Malgorzata Michalowska-Forsyth (Participant)
16 Sep 201821 Sep 2018

Activity: Participation in or organisation ofConference or symposium (Participation in/Organisation of)

Modeling of annular gate MOS transistors

Varvara Bezhenova (Speaker), Alicja Malgorzata Michalowska-Forsyth (Contributor)
19 Sep 2018

Activity: Talk or presentationPoster presentationScience to science

Cite this

Bezhenova, V. (2018). Modeling of annular gate MOS transistor. Manuscript submitted for publication. In 2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS) Gothenburg.