Modeling of annular gate MOS transistor

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth

doi:10.1109/RADECS45761.2018.9328697

Modeling of annular gate MOS transistor

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth

Institute of Electronics (4390)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation of equivalent aspect ratio estimation is complicated by additional stress effects, such as STI stress. We incorporate the STI stress effect into simulation for enclosed layout transistor in order to evaluate accuracy of two equivalent aspect ratio evaluation models: the well-known mid-line approximation and the recently introduced isosceles trapezoid approximation

Original language	English
Title of host publication	2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of Publication	Gothenburg
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS45761.2018.9328697
Publication status	Published - 2021
Event	18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Sweden Duration: 16 Sept 2018 → 21 Sept 2018 http://www.radecs2018.org/

Conference

Conference	18th Conference on Radiation Effects on Components and Systems
Abbreviated title	RADECS 2018
Country/Territory	Sweden
City	Gothenburg
Period	16/09/18 → 21/09/18
Internet address	http://www.radecs2018.org/

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation
Modelling and Simulation

Access to Document

10.1109/RADECS45761.2018.9328697

1 Conference or symposium (Participation in/Organisation of)
1 Poster presentation

18th Conference on Radiation Effects on Components and Systems
Varvara Bezhenova (Participant) & Alicja Malgorzata Michalowska-Forsyth (Participant)
16 Sept 2018 → 21 Sept 2018
Activity: Participation in or organisation of › Conference or symposium (Participation in/Organisation of)
Modeling of annular gate MOS transistors
Varvara Bezhenova (Speaker) & Alicja Malgorzata Michalowska-Forsyth (Contributor)
19 Sept 2018
Activity: Talk or presentation › Poster presentation › Science to science

Cite this

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title = "Modeling of annular gate MOS transistor",

abstract = "Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation of equivalent aspect ratio estimation is complicated by additional stress effects, such as STI stress. We incorporate the STI stress effect into simulation for enclosed layout transistor in order to evaluate accuracy of two equivalent aspect ratio evaluation models: the well-known mid-line approximation and the recently introduced isosceles trapezoid approximation",

author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata}",

year = "2021",

doi = "10.1109/RADECS45761.2018.9328697",

language = "English",

booktitle = "2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",

note = "18th Conference on Radiation Effects on Components and Systems : RADECS 2018, RADECS 2018 ; Conference date: 16-09-2018 Through 21-09-2018",

url = "http://www.radecs2018.org/",

}

TY - GEN

T1 - Modeling of annular gate MOS transistor

AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

PY - 2021

Y1 - 2021

N2 - Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation of equivalent aspect ratio estimation is complicated by additional stress effects, such as STI stress. We incorporate the STI stress effect into simulation for enclosed layout transistor in order to evaluate accuracy of two equivalent aspect ratio evaluation models: the well-known mid-line approximation and the recently introduced isosceles trapezoid approximation

AB - Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation of equivalent aspect ratio estimation is complicated by additional stress effects, such as STI stress. We incorporate the STI stress effect into simulation for enclosed layout transistor in order to evaluate accuracy of two equivalent aspect ratio evaluation models: the well-known mid-line approximation and the recently introduced isosceles trapezoid approximation

U2 - 10.1109/RADECS45761.2018.9328697

DO - 10.1109/RADECS45761.2018.9328697

M3 - Conference paper

BT - 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

CY - Gothenburg

T2 - 18th Conference on Radiation Effects on Components and Systems

Y2 - 16 September 2018 through 21 September 2018

ER -

Modeling of annular gate MOS transistor

Abstract

Conference

ASJC Scopus subject areas

Access to Document

Fingerprint

Activities

18th Conference on Radiation Effects on Components and Systems

Modeling of annular gate MOS transistors

Cite this