Modeling of annular gate MOS transistor

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

LanguageEnglish
Title of host publication2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationGothenburg
StatusSubmitted - Oct 2018
EventConference on Radiation Effects on Components and Systems - Gothenburg, Sweden
Duration: 16 Sep 201821 Sep 2018
http://www.radecs2018.org/

Conference

ConferenceConference on Radiation Effects on Components and Systems
Abbreviated titleRADECS
CountrySweden
CityGothenburg
Period16/09/1821/09/18
Internet address

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Modelling and Simulation

Cite this

Bezhenova, V. (2018). Modeling of annular gate MOS transistor. Manuscript submitted for publication. In 2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS) Gothenburg.

Modeling of annular gate MOS transistor. / Bezhenova, Varvara.

2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS). Gothenburg, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Bezhenova, V 2018, Modeling of annular gate MOS transistor. in 2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS). Gothenburg, Conference on Radiation Effects on Components and Systems , Gothenburg, Sweden, 16/09/18.
Bezhenova V. Modeling of annular gate MOS transistor. In 2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS). Gothenburg. 2018.
Bezhenova, Varvara. / Modeling of annular gate MOS transistor. 2018 18th European COnference on Radiation and Its Effects on Components and Systems (RADECS). Gothenburg, 2018.
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