Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Research output: Contribution to conferencePoster

Abstract

The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.
In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.
Original languageEnglish
Publication statusPublished - 2 Jul 2018
EventThird Barcelona Techno Week 2018: Course on Semiconductor Radiation Detectors - Institute of Cosmos Sciences, Barcelona, Spain
Duration: 2 Jul 20186 Jul 2018
http://icc.ub.edu/congress/TechnoWeek2018/

Workshop

WorkshopThird Barcelona Techno Week 2018
CountrySpain
CityBarcelona
Period2/07/186/07/18
Internet address

Keywords

  • IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Vincenzi, T., Schatzberger, G., & Michalowska-Forsyth, A. M. (2018). Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays. Poster session presented at Third Barcelona Techno Week 2018, Barcelona, Spain.