Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Research output: Contribution to conferencePosterResearch

Abstract

The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.
In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

Fingerprint

Irradiation
Data storage equipment
X rays
X ray tubes
Radiation
High energy physics
Medical applications
Cables
Electronic equipment
Innovation
Hardness
Costs
Experiments

Keywords

  • IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Vincenzi, T., Schatzberger, G., & Michalowska-Forsyth, A. M. (2018). Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays. Poster session presented at Third Barcelona Techno Week 2018, Barcelona, Spain.

Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays. / Vincenzi, Tommaso; Schatzberger, Gregor; Michalowska-Forsyth, Alicja Malgorzata.

2018. Poster session presented at Third Barcelona Techno Week 2018, Barcelona, Spain.

Research output: Contribution to conferencePosterResearch

Vincenzi, T, Schatzberger, G & Michalowska-Forsyth, AM 2018, 'Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays' Third Barcelona Techno Week 2018, Barcelona, Spain, 2/07/18 - 6/07/18, .
Vincenzi T, Schatzberger G, Michalowska-Forsyth AM. Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays. 2018. Poster session presented at Third Barcelona Techno Week 2018, Barcelona, Spain.
Vincenzi, Tommaso ; Schatzberger, Gregor ; Michalowska-Forsyth, Alicja Malgorzata. / Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays. Poster session presented at Third Barcelona Techno Week 2018, Barcelona, Spain.
@conference{09f5e1a8660e40b88c9c430273421e16,
title = "Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays",
abstract = "The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.",
keywords = "IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation",
author = "Tommaso Vincenzi and Gregor Schatzberger and Michalowska-Forsyth, {Alicja Malgorzata}",
year = "2018",
month = "7",
day = "2",
language = "English",
note = "Third Barcelona Techno Week 2018 : Course on Semiconductor Radiation Detectors ; Conference date: 02-07-2018 Through 06-07-2018",
url = "http://icc.ub.edu/congress/TechnoWeek2018/",

}

TY - CONF

T1 - Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

AU - Vincenzi,Tommaso

AU - Schatzberger,Gregor

AU - Michalowska-Forsyth,Alicja Malgorzata

PY - 2018/7/2

Y1 - 2018/7/2

N2 - The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

AB - The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

KW - IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation

M3 - Poster

ER -