Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

Tommaso Vincenzi; Gregor Schatzberger; Alicja Malgorzata Michalowska-Forsyth

Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Institute of Electronics (4390)

Research output: Contribution to conference › Poster

Abstract

The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.
In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

Original language	English
Publication status	Published - 2 Jul 2018
Event	Third Barcelona Techno Week 2018: Course on Semiconductor Radiation Detectors - Institute of Cosmos Sciences, Barcelona, Spain Duration: 2 Jul 2018 → 6 Jul 2018 http://icc.ub.edu/congress/TechnoWeek2018/

Workshop

Workshop	Third Barcelona Techno Week 2018
Country/Territory	Spain
City	Barcelona
Period	2/07/18 → 6/07/18
Internet address	http://icc.ub.edu/congress/TechnoWeek2018/

Keywords

IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@conference{09f5e1a8660e40b88c9c430273421e16,

title = "Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays",

abstract = "The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.",

keywords = "IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation",

author = "Tommaso Vincenzi and Gregor Schatzberger and Michalowska-Forsyth, {Alicja Malgorzata}",

year = "2018",

month = jul,

day = "2",

language = "English",

note = "Third Barcelona Techno Week 2018 : Course on Semiconductor Radiation Detectors ; Conference date: 02-07-2018 Through 06-07-2018",

url = "http://icc.ub.edu/congress/TechnoWeek2018/",

}

TY - CONF

T1 - Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

AU - Vincenzi, Tommaso

AU - Schatzberger, Gregor

AU - Michalowska-Forsyth, Alicja Malgorzata

PY - 2018/7/2

Y1 - 2018/7/2

N2 - The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

AB - The problem of radiation hardness in memory bit cells is very well renowned and explored. The need for solutions compliant with standard electronics processes is however more and more important both for medical applications and High Energy Physics experiments.In the world of radiation hard Non-Volatile Memories, the topic of reliability has always been a primary focus. Nevertheless, considering the cost of special processes for innovative bit cells such as MRAMs and Phase Change Bit Cells, inherently more robust, the investigation and innovation of charge-based cells is still of primary importance. This poster is to present the measurement setup for Sidewall Spacer (SwSpc) Memory Bit Cells, that has the advantage to sustain live measurements during irradiation, including PROGRAM and ERASE operations, ID / VG and Vth / TPROG curves on the cells themselves, and has sub-10nA accuracy with 2m cables to fit most X-ray tube irradiator setups.

KW - IC, Bit Cell, Non volatile memory, X-ray, Ionizing Radiation

M3 - Poster

T2 - Third Barcelona Techno Week 2018

Y2 - 2 July 2018 through 6 July 2018

ER -

Measurement setup for X-ray irradiation of Non-Volatile Memory Bit Cell Arrays

Abstract

Workshop

Keywords

ASJC Scopus subject areas

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