MBE growth of para-hexaphenyl on GaAs(001)-2×4

B. Müller, T. Kuhlmann, K. Lischka, H. Schwer, Roland Resel, Günther Leising

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)256-266
JournalSurface science
Volume418
Issue number1
Publication statusPublished - 1998

Treatment code (Nähere Zuordnung)

  • Experimental

Cite this

Müller, B., Kuhlmann, T., Lischka, K., Schwer, H., Resel, R., & Leising, G. (1998). MBE growth of para-hexaphenyl on GaAs(001)-2×4. Surface science, 418(1), 256-266.

MBE growth of para-hexaphenyl on GaAs(001)-2×4. / Müller, B.; Kuhlmann, T.; Lischka, K.; Schwer, H.; Resel, Roland; Leising, Günther.

In: Surface science, Vol. 418, No. 1, 1998, p. 256-266.

Research output: Contribution to journalArticleResearchpeer-review

Müller, B, Kuhlmann, T, Lischka, K, Schwer, H, Resel, R & Leising, G 1998, 'MBE growth of para-hexaphenyl on GaAs(001)-2×4' Surface science, vol. 418, no. 1, pp. 256-266.
Müller B, Kuhlmann T, Lischka K, Schwer H, Resel R, Leising G. MBE growth of para-hexaphenyl on GaAs(001)-2×4. Surface science. 1998;418(1):256-266.
Müller, B. ; Kuhlmann, T. ; Lischka, K. ; Schwer, H. ; Resel, Roland ; Leising, Günther. / MBE growth of para-hexaphenyl on GaAs(001)-2×4. In: Surface science. 1998 ; Vol. 418, No. 1. pp. 256-266.
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AU - Leising, Günther

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