Low TID effects on MOS transistors

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth, Walter Pflanzl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationGothenburg
Publication statusSubmitted - Oct 2018
EventConference on Radiation Effects on Components and Systems - Gothenburg, Sweden
Duration: 16 Sep 201821 Sep 2018
http://www.radecs2018.org/

Conference

ConferenceConference on Radiation Effects on Components and Systems
Abbreviated titleRADECS
CountrySweden
CityGothenburg
Period16/09/1821/09/18
Internet address

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Experimental

Activities

  • 1 Conference or symposium (Participation in/Organisation of)
  • 1 Poster presentation

Conference on Radiation Effects on Components and Systems

Varvara Bezhenova (Participant), Alicja Malgorzata Michalowska-Forsyth (Participant)
16 Sep 201821 Sep 2018

Activity: Participation in or organisation ofConference or symposium (Participation in/Organisation of)

Low TID effects on MOS transistors

Varvara Bezhenova (Speaker), Alicja Malgorzata Michalowska-Forsyth (Speaker), Walter Pflanzl (Contributor)
19 Sep 2018

Activity: Talk or presentationPoster presentationScience to science

Cite this

Bezhenova, V., Michalowska-Forsyth, A. M., & Pflanzl, W. (2018). Low TID effects on MOS transistors. Manuscript submitted for publication. In 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Gothenburg.