Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

Gernot Gruber, Markus Koch, Peter Hadley, Dethard Peters, Thomas Aichinger

Research output: Contribution to journalArticleResearch

Original languageEnglish
Pages (from-to)165-168
JournalAIP Conference Proceedings
Volume1583
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Experimental

Cite this

Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination. / Gruber, Gernot; Koch, Markus; Hadley, Peter; Peters, Dethard; Aichinger, Thomas.

In: AIP Conference Proceedings, Vol. 1583, 2014, p. 165-168.

Research output: Contribution to journalArticleResearch

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publisher = "American Institute of Physics Publising LLC",

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AU - Aichinger, Thomas

PY - 2014

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