Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

Gernot Gruber, Markus Koch, Peter Hadley, Dethard Peters, Thomas Aichinger

Research output: Contribution to journal › Article › Research

Original languageEnglish
Pages (from-to)165-168
JournalAIP Conference Proceedings
Volume1583
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Experimental

Cite this

Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination. / Gruber, Gernot; Koch, Markus; Hadley, Peter; Peters, Dethard; Aichinger, Thomas.

In: AIP Conference Proceedings, Vol. 1583, 2014, p. 165-168.

Research output: Contribution to journal › Article › Research

Gruber, G, Koch, M, Hadley, P, Peters, D & Aichinger, T 2014, 'Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination' AIP Conference Proceedings, vol. 1583, pp. 165-168. https://doi.org/10.1063/1.4865627
Gruber G, Koch M, Hadley P, Peters D, Aichinger T. Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination. AIP Conference Proceedings. 2014;1583:165-168. https://doi.org/10.1063/1.4865627
Gruber, Gernot ; Koch, Markus ; Hadley, Peter ; Peters, Dethard ; Aichinger, Thomas. / Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination. In: AIP Conference Proceedings. 2014 ; Vol. 1583. pp. 165-168.
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