Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

Gernot Gruber; Markus Koch; Peter Hadley; Dethard Peters; Thomas Aichinger

doi:10.1063/1.4865627

Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

Gernot Gruber, Markus Koch, Peter Hadley, Dethard Peters, Thomas Aichinger

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	165-168
Journal	AIP Conference Proceedings
Volume	1583
DOIs	https://doi.org/10.1063/1.4865627
Publication status	Published - 2014

Fields of Expertise

Advanced Materials Science

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Experimental

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10.1063/1.4865627

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@article{947736e646714665bade63ae6de88137,

title = "Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination",

author = "Gernot Gruber and Markus Koch and Peter Hadley and Dethard Peters and Thomas Aichinger",

year = "2014",

doi = "10.1063/1.4865627",

language = "English",

volume = "1583",

pages = "165--168",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

AU - Gruber, Gernot

AU - Koch, Markus

AU - Hadley, Peter

AU - Peters, Dethard

AU - Aichinger, Thomas

PY - 2014

Y1 - 2014

UR - http://dx.doi.org/10.1063/1.4865627

U2 - 10.1063/1.4865627

DO - 10.1063/1.4865627

M3 - Article

VL - 1583

SP - 165

EP - 168

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

ER -

Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

Fields of Expertise

Treatment code (Nähere Zuordnung)

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Cite this