Abstract
This study presents electrically detected magnetic resonance (EDMR) measurements on a silicon carbide (SiC) MOSFET having the structure of a double-diffused silicon MOSFET (DMOS). The resonance pattern of a SiC DMOS was measured by monitoring the change of the recombination current between the source/body and the drain. The amplitude of the response has a maximum when the device is biased in depletion due to the equal concentrations of electrons and holes at the interface resulting in the most efficient recombination. The measured anisotropic g-tensor has axial symmetry with g∥ = 2.0051(4) (B ‖ c-axis), and g⊥ = 2.0029(4) (B⊥ c-axis) and the pattern shows several hyperfine (HF) peaks. We tentatively identify the observed defect as a silicon vacancy located directly at the interface.
Original language | English |
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Pages (from-to) | 165-168 |
Journal | AIP Conference Proceedings |
Volume | 1583 |
DOIs | |
Publication status | Published - 2014 |
Event | 27th International Conference on Defects in Semiconductors: ICDS 2013 - Bologna, Italy Duration: 21 Jul 2013 → 26 Jul 2013 |
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Experimental