Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

Gernot Gruber*, Thomas Aichinger, Gregor Pobegen, Dethard Peters, Markus Koch, Peter Hadley

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
PublisherTrans Tech Publications Ltd.
Pages643-646
Number of pages4
Volume858
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 4 Oct 20159 Oct 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Conference

Conference16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period4/10/159/10/15

Keywords

  • Annealing
  • EDMR
  • Interface defects
  • MOSFET
  • Nitrogen
  • Passivation
  • SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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