Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

Gernot Gruber; Thomas Aichinger; Gregor Pobegen; Dethard Peters; Markus Koch; Peter Hadley

doi:10.4028/www.scientific.net/MSF.858.643

Influence of oxide processing on the defects at the SiC-SiO₂ interface measured by electrically detected magnetic resonance

Gernot Gruber^*, Thomas Aichinger, Gregor Pobegen, Dethard Peters, Markus Koch, Peter Hadley

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2015
Publisher	Trans Tech Publications Ltd.
Pages	643-646
Number of pages	4
Volume	858
ISBN (Print)	9783035710427
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.643
Publication status	Published - 2016
Event	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: 4 Oct 2015 → 9 Oct 2015

Publication series

Name	Materials Science Forum
Volume	858
ISSN (Print)	02555476

Conference

Conference	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/Territory	Italy
City	Sicily
Period	4/10/15 → 9/10/15

Keywords

Annealing
EDMR
Interface defects
MOSFET
Nitrogen
Passivation
SiC

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Access to Document

10.4028/www.scientific.net/MSF.858.643

Cite this

Gruber, G., Aichinger, T., Pobegen, G., Peters, D., Koch, M., & Hadley, P. (2016). Influence of oxide processing on the defects at the SiC-SiO₂ interface measured by electrically detected magnetic resonance. In Silicon Carbide and Related Materials 2015 (Vol. 858, pp. 643-646). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd.. https://doi.org/10.4028/www.scientific.net/MSF.858.643

Influence of oxide processing on the defects at the SiC-SiO₂ interface measured by electrically detected magnetic resonance. / Gruber, Gernot; Aichinger, Thomas; Pobegen, Gregor et al.
Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd., 2016. p. 643-646 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Gruber, G, Aichinger, T, Pobegen, G, Peters, D, Koch, M & Hadley, P 2016, Influence of oxide processing on the defects at the SiC-SiO₂ interface measured by electrically detected magnetic resonance. in Silicon Carbide and Related Materials 2015. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications Ltd., pp. 643-646, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4/10/15. https://doi.org/10.4028/www.scientific.net/MSF.858.643

@inproceedings{e72a31c20602408ebad08b29b8691716,

title = "Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance",

abstract = "Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.",

keywords = "Annealing, EDMR, Interface defects, MOSFET, Nitrogen, Passivation, SiC",

author = "Gernot Gruber and Thomas Aichinger and Gregor Pobegen and Dethard Peters and Markus Koch and Peter Hadley",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.858.643",

language = "English",

isbn = "9783035710427",

volume = "858",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd.",

pages = "643--646",

booktitle = "Silicon Carbide and Related Materials 2015",

note = "16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",

}

TY - GEN

T1 - Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

AU - Gruber, Gernot

AU - Aichinger, Thomas

AU - Pobegen, Gregor

AU - Peters, Dethard

AU - Koch, Markus

AU - Hadley, Peter

PY - 2016

Y1 - 2016

N2 - Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.

AB - Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.

KW - Annealing

KW - EDMR

KW - Interface defects

KW - MOSFET

KW - Nitrogen

KW - Passivation

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=84971505082&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.858.643

DO - 10.4028/www.scientific.net/MSF.858.643

M3 - Conference paper

AN - SCOPUS:84971505082

SN - 9783035710427

VL - 858

T3 - Materials Science Forum

SP - 643

EP - 646

BT - Silicon Carbide and Related Materials 2015

PB - Trans Tech Publications Ltd.

T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

Y2 - 4 October 2015 through 9 October 2015

ER -