Inclusions in Si whiskers grown by Ni metal induced lateral crystallization

György Zoltán Radnóczi; Daniel Knez; Ferdinand Hofer; Nikolaos Frangis; Nikolaos Vouroutzis; John Stoemenos; Béla Pécz

doi:10.1063/1.4979728

Inclusions in Si whiskers grown by Ni metal induced lateral crystallization

György Zoltán Radnóczi^*, Daniel Knez, Ferdinand Hofer, Nikolaos Frangis, Nikolaos Vouroutzis, John Stoemenos, Béla Pécz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of Nickel-di-silicide inclusions in silicon whiskers grown during low temperature Ni Metal Induced Lateral Crystallization of amorphous Silicon was studied by High Resolution Transmission Electron Microscopy, Scanning Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy. The heat treatment of the samples lasted for 11 + 11 days at 413 °C for the first 11 days and 442 °C for the rest of the time. The size of the inclusions ranges from just a few atoms to 15-20 nm. It was shown that the NiSi₂ inclusions have the form of tetrahedrons, which are bound by {111} coherent interfaces with the Si matrix. These inclusions are homogeneously distributed along the whiskers, and the Ni percentage incorporated in these is 0.035 at. %. The tetrahedral inclusions are formed by trapping NiSi₂ clusters at the Si/NiSi₂ interface during whisker growth.

Original language	English
Article number	145301
Journal	Journal of Applied Physics
Volume	121
Issue number	14
DOIs	https://doi.org/10.1063/1.4979728
Publication status	Published - 14 Apr 2017

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4979728

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title = "Inclusions in Si whiskers grown by Ni metal induced lateral crystallization",

abstract = "The formation of Nickel-di-silicide inclusions in silicon whiskers grown during low temperature Ni Metal Induced Lateral Crystallization of amorphous Silicon was studied by High Resolution Transmission Electron Microscopy, Scanning Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy. The heat treatment of the samples lasted for 11 + 11 days at 413 °C for the first 11 days and 442 °C for the rest of the time. The size of the inclusions ranges from just a few atoms to 15-20 nm. It was shown that the NiSi2 inclusions have the form of tetrahedrons, which are bound by {111} coherent interfaces with the Si matrix. These inclusions are homogeneously distributed along the whiskers, and the Ni percentage incorporated in these is 0.035 at. %. The tetrahedral inclusions are formed by trapping NiSi2 clusters at the Si/NiSi2 interface during whisker growth.",

author = "Radn{\'o}czi, {Gy{\"o}rgy Zolt{\'a}n} and Daniel Knez and Ferdinand Hofer and Nikolaos Frangis and Nikolaos Vouroutzis and John Stoemenos and B{\'e}la P{\'e}cz",

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T1 - Inclusions in Si whiskers grown by Ni metal induced lateral crystallization

AU - Radnóczi, György Zoltán

AU - Knez, Daniel

AU - Hofer, Ferdinand

AU - Frangis, Nikolaos

AU - Vouroutzis, Nikolaos

AU - Stoemenos, John

AU - Pécz, Béla

PY - 2017/4/14

Y1 - 2017/4/14

N2 - The formation of Nickel-di-silicide inclusions in silicon whiskers grown during low temperature Ni Metal Induced Lateral Crystallization of amorphous Silicon was studied by High Resolution Transmission Electron Microscopy, Scanning Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy. The heat treatment of the samples lasted for 11 + 11 days at 413 °C for the first 11 days and 442 °C for the rest of the time. The size of the inclusions ranges from just a few atoms to 15-20 nm. It was shown that the NiSi2 inclusions have the form of tetrahedrons, which are bound by {111} coherent interfaces with the Si matrix. These inclusions are homogeneously distributed along the whiskers, and the Ni percentage incorporated in these is 0.035 at. %. The tetrahedral inclusions are formed by trapping NiSi2 clusters at the Si/NiSi2 interface during whisker growth.

AB - The formation of Nickel-di-silicide inclusions in silicon whiskers grown during low temperature Ni Metal Induced Lateral Crystallization of amorphous Silicon was studied by High Resolution Transmission Electron Microscopy, Scanning Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy. The heat treatment of the samples lasted for 11 + 11 days at 413 °C for the first 11 days and 442 °C for the rest of the time. The size of the inclusions ranges from just a few atoms to 15-20 nm. It was shown that the NiSi2 inclusions have the form of tetrahedrons, which are bound by {111} coherent interfaces with the Si matrix. These inclusions are homogeneously distributed along the whiskers, and the Ni percentage incorporated in these is 0.035 at. %. The tetrahedral inclusions are formed by trapping NiSi2 clusters at the Si/NiSi2 interface during whisker growth.

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Inclusions in Si whiskers grown by Ni metal induced lateral crystallization

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