Abstract
An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.
Original language | English |
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Article number | 9214895 |
Pages (from-to) | 4602-4605 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 67 |
Issue number | 11 |
DOIs | |
Publication status | Published - Nov 2020 |
Keywords
- Dynamic effects
- gallium nitride
- hard switching (HSW)
- hot electrons (HEs)
- hydrodynamic (HD) simulations
- semi-ON
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering