Abstract
This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.
Original language | English |
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Article number | 114208 |
Journal | Microelectronics Reliability |
Volume | 126 |
DOIs | |
Publication status | Published - Nov 2021 |
Keywords
- Dynamic effects
- Gallium nitride
- Hard-switching
- Hot electrons
- Hydrodynamic simulations
- Semi-ON
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering