Abstract
Highly sensitive chemically amplified resists are well suited for large-area, high-resolution rapid prototyping by electron beam lithography. The major drawback of these resists is their susceptibility to T-topping effects, sensitivity losses, and linewidth variations caused by delay times between individual process steps. Hence, they require a very tight process control, which hinders their potentially wide application in R&D. We demonstrate a highly robust electron beam lithography lift-off process using a chemically amplified positive tone 40XT photoresist in combination with an acidic conducting polymer (PEDOT:PSS) as a protective top-coating. Even extended delay times of 24 h did not lead to any sensitivity losses or linewidth variations. Moreover, an overall high performance with a resolution of 80 nm (after lift-off) and a high sensitivity (
Original language | English |
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Article number | 095010 |
Number of pages | 7 |
Journal | Journal of Micromechanics and Microengineering |
Volume | 24 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2014 |
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Basic - Fundamental (Grundlagenforschung)