High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Research output: Chapter in Book/Report/Conference proceedingConference paper

Original languageEnglish
Title of host publicationESREF2019_Proceedings
Chaptersession C 2.1
Number of pages6
Publication statusPublished - 2019
Event30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Centre de congres P. Baudis, Toulouse , France
Duration: 23 Sep 201926 Sep 2019
https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France

Conference

Conference30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Abbreviated titleESREF 2019
CountryFrance
CityToulouse
Period23/09/1926/09/19
Internet address

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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