High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Evelin Fisslthaler; Georg Haberfehlner; Christian Gspan; G. Gruber; Werner Grogger

High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Evelin Fisslthaler, Georg Haberfehlner, Christian Gspan, G. Gruber, Werner Grogger

Institute of Electron Microscopy and Nanoanalysis (5190)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Original language	English
Title of host publication	ESREF2019_Proceedings
Chapter	session C 2.1
Number of pages	6
Publication status	Published - 2019
Event	30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Centre de congres P. Baudis, Toulouse , France Duration: 23 Sept 2019 → 26 Sept 2019 https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France

Conference

Conference	30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Abbreviated title	ESREF 2019
Country/Territory	France
City	Toulouse
Period	23/09/19 → 26/09/19
Internet address	https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France

ASJC Scopus subject areas

General Materials Science

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Cite this

@inproceedings{36ad5b8d620a4c1d922cba372441a749,

title = "High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM",

author = "Evelin Fisslthaler and Georg Haberfehlner and Christian Gspan and G. Gruber and Werner Grogger",

year = "2019",

language = "English",

booktitle = "ESREF2019_Proceedings",

note = "30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis , ESREF 2019 ; Conference date: 23-09-2019 Through 26-09-2019",

url = "https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France",

}

TY - GEN

T1 - High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

AU - Fisslthaler, Evelin

AU - Haberfehlner, Georg

AU - Gspan, Christian

AU - Gruber, G.

AU - Grogger, Werner

PY - 2019

Y1 - 2019

M3 - Conference paper

BT - ESREF2019_Proceedings

T2 - 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Y2 - 23 September 2019 through 26 September 2019

ER -